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IRF6708S2TR1PBF

IRF6708S2TR1PBF
Mfr. #:
IRF6708S2TR1PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 30V 1 N-CH HEXFET DIRECTFET S1
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF6708S2TR1PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6708S2TR1PBF DatasheetIRF6708S2TR1PBF Datasheet (P4-P6)IRF6708S2TR1PBF Datasheet (P7-P9)IRF6708S2TR1PBF Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DirectFET-S1
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
36 A
Rds On - Resistencia de la fuente de drenaje:
14.3 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
6.6 nC
Pd - Disipación de energía:
20 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.74 mm
Longitud:
4.85 mm
Tipo de transistor:
1 N-Channel
Ancho:
3.95 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001523958
Unidad de peso:
0.017637 oz
Tags
IRF670, IRF67, IRF6, IRF
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 13A 6-Pin Direct-FET S1 T/R
***ied Electronics & Automation
MOSFET N-Ch 30V 13A HEXFET Direct-FET S1
***ment14 APAC
MOSFET, N CH, 30V, 13A, DIRECTFET LV
***i-Key
MOSFET N-CH 30V 13A DIRECTFET-LV
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
MOSFET, N CH, 30V, 13A, DIRECTFET LV; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 13A, DIRECTFET LV; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:20W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Pulse Current Idm:110A; Voltage Vgs th Min:1.35V
Parte # Mfg. Descripción Valores Precio
IRF6708S2TR1PBF
DISTI # IRF6708S2TR1PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 13A DIRECTFET-LV
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6708S2TR1PBF
    DISTI # 942-IRF6708S2TR1PBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET DIRECTFET S1
    RoHS: Compliant    		0
      Imagen Parte # Descripción
      IRF6708S2TR1PBF

      Mfr.#: IRF6708S2TR1PBF

      OMO.#: OMO-IRF6708S2TR1PBF

      		 MOSFET 30V 1 N-CH HEXFET DIRECTFET S1
      IRF6708S2TRPBF

      Mfr.#: IRF6708S2TRPBF

      OMO.#: OMO-IRF6708S2TRPBF

      		 MOSFET
      IRF6708S2TR1PBF

      Mfr.#: IRF6708S2TR1PBF

      OMO.#: OMO-IRF6708S2TR1PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 13A DIRECTFET-LV
      IRF6708S2TRPBF

      Mfr.#: IRF6708S2TRPBF

      OMO.#: OMO-IRF6708S2TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 13A DIRECTFET-LV
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de IRF6708S2TR1PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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