IRF6709S2TR1PBF

IRF6709S2TR1PBF
Mfr. #:
IRF6709S2TR1PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF6709S2TR1PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6709S2TR1PBF DatasheetIRF6709S2TR1PBF Datasheet (P4-P6)IRF6709S2TR1PBF Datasheet (P7-P9)IRF6709S2TR1PBF Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DirectFET-S1
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
39 A
Rds On - Resistencia de la fuente de drenaje:
13.5 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
8.1 nC
Pd - Disipación de energía:
21 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.74 mm
Longitud:
4.85 mm
Tipo de transistor:
1 N-Channel
Ancho:
3.95 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001523938
Unidad de peso:
0.003527 oz
Tags
IRF670, IRF67, IRF6, IRF
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R
***ied Electronics & Automation
MOSFET; 25V; 12.000A; DIRECTFET-LV
***i-Key
MOSFET N-CH 25V 12A DIRECTFET-S1
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:12A; On State Resistance:5.9mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:S1; ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:12A; On State Resistance:5.9mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:S1; Termination Type:SMD; Alternate Case Style:DirectFET; Max Voltage Vgs th:2.35V; Min Voltage Vgs th:1.35V; Pulse Current Idm:100A; Transistor Case Style:S1
***ment14 APAC
MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:12A; Package / Case:S1; Power Dissipation Pd:1.8W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
Parte # Mfg. Descripción Valores Precio
IRF6709S2TR1PBF
DISTI # IRF6709S2TR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET-S1
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6709S2TR1PBF
    DISTI # IRF6709S2TR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET-S1
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6709S2TR1PBF
      DISTI # IRF6709S2TR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET-S1
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6709S2TR1PBF
        DISTI # 70019593
        Infineon Technologies AGMOSFET,25V,12.000A,DIRECTFET-LV
        RoHS: Compliant
        0
        • 1000:$1.0400
        • 2000:$1.0190
        • 5000:$0.9880
        • 10000:$0.9460
        • 25000:$0.8840
        IRF6709S2TR1PBF
        DISTI # 942-IRF6709S2TR1PBF
        Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
        RoHS: Compliant
        0
          IRF6709S2TR1PBFInternational Rectifier 1000
            IRF6709S2TR1PBFInternational Rectifier 
            RoHS: Compliant
            1000
              IRF6709S2TR1PBF
              DISTI # 1688580
              Infineon Technologies AGMOSFET, N-CH, 25V, DIRECTFETS1
              RoHS: Compliant
              668
              • 1000:$1.4100
              • 250:$1.5900
              • 100:$1.7800
              • 25:$2.2000
              • 1:$2.6700
              IRF6709S2TR1PBF
              DISTI # 1688580
              Infineon Technologies AGMOSFET, N-CH, 25V, DIRECTFETS1
              RoHS: Compliant
              668
              • 500:£0.4580
              • 250:£0.4590
              • 100:£0.4600
              • 25:£0.5450
              • 5:£0.5950
              Imagen Parte # Descripción
              IRF6709S2TRPBF

              Mfr.#: IRF6709S2TRPBF

              OMO.#: OMO-IRF6709S2TRPBF

              MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
              IRF6709S2TR1PBF

              Mfr.#: IRF6709S2TR1PBF

              OMO.#: OMO-IRF6709S2TR1PBF

              MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
              IRF6709S2TR1PBF

              Mfr.#: IRF6709S2TR1PBF

              OMO.#: OMO-IRF6709S2TR1PBF-INFINEON-TECHNOLOGIES

              MOSFET N-CH 25V 12A DIRECTFET-S1
              IRF6709S2TRPBF

              Mfr.#: IRF6709S2TRPBF

              OMO.#: OMO-IRF6709S2TRPBF-INFINEON-TECHNOLOGIES

              MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
              Disponibilidad
              Valores:
              Available
              En orden:
              4000
              Ingrese la cantidad:
              El precio actual de IRF6709S2TR1PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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