IPP08C

IPP08CNE8N G vs IPP08CN10N G vs IPP08CN10L G

 
PartNumberIPP08CNE8N GIPP08CN10N GIPP08CN10L G
DescriptionMOSFET N-Ch 85V 95A TO220-3MOSFET N-Ch 100V 95A TO220-3MOSFET N-CH 100V 98A TO220-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage85 V100 V-
Id Continuous Drain Current95 A95 A-
Rds On Drain Source Resistance6.4 mOhms8.5 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation167 W167 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height15.65 mm15.65 mm-
Length10 mm10 mm-
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm4.4 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time6 ns6 ns-
Product TypeMOSFETMOSFET-
Rise Time24 ns24 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns26 ns-
Typical Turn On Delay Time15 ns15 ns-
Part # AliasesIPP08CNE8NGXKIPP08CN10NGXK-
Unit Weight0.211644 oz0.211644 oz-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPP08CNE8N G MOSFET N-Ch 85V 95A TO220-3
IPP08CN10N G MOSFET N-Ch 100V 95A TO220-3
Infineon Technologies
Infineon Technologies
IPP08CN10L G MOSFET N-CH 100V 98A TO220-3
IPP08CNE8N G MOSFET N-CH 85V 95A TO-220
IPP08CN10N G MOSFET N-CH 100V 95A TO-220
IPP08CN10 Nuevo y original
IPP08CN10L Nuevo y original
IPP08CN10LG Nuevo y original
IPP08CN10N Nuevo y original
IPP08CN10N,08CN10N Nuevo y original
IPP08CN10NG Nuevo y original
IPP08CN10NG,IPP08CN10N,0 Nuevo y original
IPP08CN10NG. Nuevo y original
IPP08CN15N Nuevo y original
IPP08CNE8NG Power Field-Effect Transistor, 95A I(D), 85V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP08CNE8NG,08CNE8N Nuevo y original
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