IPP08

IPP083N10N5AKSA1 vs IPP080N03L G vs IPP080N06N G

 
PartNumberIPP083N10N5AKSA1IPP080N03L GIPP080N06N G
DescriptionMOSFET N-Ch 100V 73A TO220-3MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3MOSFET N-CH 60V 80A TO-220
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CasePG-TO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V30 V-
Id Continuous Drain Current73 A50 A-
Rds On Drain Source Resistance8.3 mOhms8 mOhms-
Vgs th Gate Source Threshold Voltage2.2 V--
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge30 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation100 W47 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height15.65 mm15.65 mm-
Length10 mm10 mm-
SeriesOptiMOS 5--
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm4.4 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min48 S--
Fall Time5 ns2.8 ns-
Product TypeMOSFETMOSFET-
Rise Time5 ns3.6 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time21 ns18 ns-
Typical Turn On Delay Time13 ns4.6 ns-
Part # AliasesIPP083N10N5 SP001226036IPP080N03LGHKSA1 SP000264166-
Unit Weight0.211644 oz0.211644 oz-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPP083N10N5AKSA1 MOSFET N-Ch 100V 73A TO220-3
IPP084N06L3 G MOSFET N-Ch 60V 50A TO220-3
IPP086N10N3 G MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
IPP083N10N5AKSA1 MOSFET N-CH TO220-3
IPP080N03L G MOSFET N-CH 30V 50A TO220-3
IPP08CN10L G MOSFET N-CH 100V 98A TO220-3
IPP080N06N G MOSFET N-CH 60V 80A TO-220
IPP084N06L3GXKSA1 MOSFET N-CH 60V 50A TO-220-3
IPP086N10N3GXKSA1 MOSFET N-CH 100V 80A TO220-3
IPP084N06L3GHKSA1 MOSFET N-Ch 60V 50A TO220-3
IPP086N10N3GHKSA1 MOSFET N-Ch 100V 80A TO220-3
Infineon Technologies
Infineon Technologies
IPP086N10N3GXKSA1 MOSFET MV POWER MOS
IPP080N03L G MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3
IPP086N10N3GHKSA1 MOSFET N-Ch 100V 80A TO220-3
IPP086N10N3GXK Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP086N10N3GXKSA1)
IPP080N03LG Nuevo y original
IPP080N03LGHKSA1 Nuevo y original
IPP080N06 Nuevo y original
IPP080N06N Nuevo y original
IPP080N06N,IPP080N06NG Nuevo y original
IPP080N06NG Nuevo y original
IPP080N06NG(080N06N) Nuevo y original
IPP083N10N5 MOSFET DIFFERENTIATED MOSFETS (Alt: IPP083N10N5)
IPP083N10N5 . Nuevo y original
IPP084N06L Nuevo y original
IPP084N06L3 Nuevo y original
IPP084N06L3G Power Field-Effect Transistor, 50A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP084N06L3G(084N06L) Nuevo y original
IPP084N06L3G,084N06L,IPP Nuevo y original
IPP084N06L3G,IPP084N06L3 Nuevo y original
IPP085N06LG Nuevo y original
IPP085N06LG(085N06L) Nuevo y original
IPP085N06LGAKSA1 Trans MOSFET N-CH 60V 80A 3-Pin TO-220 Tube - Bulk (Alt: IPP085N06LGAKSA1)
IPP086N10 Nuevo y original
IPP086N10N3 - Bulk (Alt: IPP086N10N3)
IPP086N10N3,086N10N Nuevo y original
IPP086N10N3,086N10N,IPP0 Nuevo y original
IPP086N10N3G Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP086N10N3G , 2SD780-DW Nuevo y original
IPP086N10N3G HF Nuevo y original
IPP086N10N3G(086N10N) Nuevo y original
IPP086N10N3G,086N10N,IPP Nuevo y original
IPP086N10N3G,IPP086N10N3 Nuevo y original
IPP086N10N3G/086N10N Nuevo y original
IPP086N10N3GHF Nuevo y original
IPP086N10N3GXKSA1 , 2SD7 Nuevo y original
IPP08CN10 Nuevo y original
IPP08CN10L Nuevo y original
IPP08CN10LG Nuevo y original
IPP086N10N3 G Darlington Transistors MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
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