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| PartNumber | IPD60R1K5CEAUMA1 | IPD60R1K5CEATMA1 |
| Description | MOSFET CONSUMER | MOSFET N-Ch 600V 3.1A DPAK-2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | CoolMOS CE | - |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Moisture Sensitive | Yes | - |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPD60R1K5CE SP001396902 | IPD60R1K5CEATMA1 SP001276036 |
| Unit Weight | 0.011993 oz | 0.139332 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Id Continuous Drain Current | - | 3.1 A |
| Rds On Drain Source Resistance | - | 1.5 Ohms |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 9.4 nC |
| Minimum Operating Temperature | - | - 40 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 28 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Fall Time | - | 20 ns |
| Rise Time | - | 7 ns |
| Typical Turn Off Delay Time | - | 40 ns |
| Typical Turn On Delay Time | - | 8 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60R1K5CEAUMA1 | MOSFET CONSUMER | |
| IPD60R1K5CEAUMA1 | MOSFET N-CHANNEL 650V 5A TO252 | ||
| IPD60R1K5CEATMA1 | IGBT Transistors MOSFET N-Ch 650V 3.1A DPAK-2 | ||
Infineon Technologies |
IPD60R1K5CEATMA1 | MOSFET N-Ch 600V 3.1A DPAK-2 | |
| IPD60R1K5CEATMA1 , 2SD23 | Nuevo y original |