IPD

IPD25CN10NGATMA1 vs IPD230N06NGBTMA1 vs IPD250N06N3GBTMA1

 
PartNumberIPD25CN10NGATMA1IPD230N06NGBTMA1IPD250N06N3GBTMA1
DescriptionMOSFET MV POWER MOSMOSFET N-CH 60V 30A DPAKMOSFET N-CH 60V 28A TO252-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance19 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge23 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation71 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 2--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min38 S--
Fall Time3 ns--
Product TypeMOSFET--
Rise Time4 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesG IPD25CN10N SP001127810--
Unit Weight0.139332 oz--
  • Empezar con
  • IPD 1152
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPD25N06S4L30ATMA2 MOSFET MOSFET
IPD26N06S2L35ATMA2 MOSFET N-CHANNEL_55/60V
IPD25N06S240ATMA2 MOSFET N-CHANNEL_55/60V
IPD25CN10NGATMA1 MOSFET MV POWER MOS
IPD25DP06LMATMA1 MOSFET TRENCH 40<-<100V
IPD25DP06NMATMA1 MOSFET TRENCH 40<-<100V
IPD25CNE8N G MOSFET N-CH 85V 35A TO252-3
IPD230N06NGBTMA1 MOSFET N-CH 60V 30A DPAK
IPD25DP06LMATMA1 MOSFET P-CH 60V TO252-3
IPD25DP06NMATMA1 MOSFET P-CH 60V TO252-3
IPD26N06S2L35ATMA1 Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
IPD250N06N3GBTMA1 MOSFET N-CH 60V 28A TO252-3
IPD25CN10NGATMA1 MOSFET N-CH 100V 35A TO252-3
IPD25CN10NGBUMA1 MOSFET N-CH 100V 35A TO252-3
IPD25N06S240ATMA1 MOSFET N-CH 55V 29A TO252-3
IPD25N06S240ATMA2 MOSFET N-CH 55V 29A TO252-3
IPD25N06S4L30ATMA1 MOSFET N-CH 60V 25A TO252-3
IPD25N06S4L30ATMA2 MOSFET N-CH 60V 25A TO252-3
IPD26N06S2L35ATMA2 MOSFET N-CH 55V 30A TO252-3
Infineon Technologies
Infineon Technologies
IPD25CN10NGBUMA1 MOSFET N-Ch 100V 35A DPAK-2 OptiMOS 2
IPD26N06S2L35ATMA1 MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
IPD25N06S240ATMA1 MOSFET N-CHANNEL_55/60V
IPD25CN10NGATMA1-CUT TAPE Nuevo y original
IPD230N06L G Nuevo y original
IPD230N06N G Nuevo y original
IPD250N06N3 G MOSFET N-Ch 200V 28A DPAK-2
IPD250N06N3G Nuevo y original
IPD250N06N3GS Nuevo y original
IPD25CN10 Nuevo y original
IPD25CN10N G MOSFET N-Ch 100V 35A DPAK-2 OptiMOS 2
IPD25CN10NG , 2SD2118TLQ Nuevo y original
IPD25CN10NGBUMA1 , 2SD21 Nuevo y original
IPD25CNE8NG Nuevo y original
IPD25N06 Nuevo y original
IPD25N06L Nuevo y original
IPD25N06S-04 Nuevo y original
IPD25N06S4L Nuevo y original
IPD25N06S4L-30. Nuevo y original
IPD25NE8NG Nuevo y original
IPD26N06S2L-35 MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
IPD26N06S2L35 SmallSignalBipolarTransistor,0.3AI(C),140VV(BR)CEO,1-Element,NPN,Silicon
IPD2N06L35 Nuevo y original
IPD25DP06LMSAUMA1 MOSFET P-CH 60V TO252-3
IPD26DP06NMSAUMA1 MOSFET P-CH 60V TO252-3
IPD230N06LG Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD230N06NG Nuevo y original
IPD250N06N Nuevo y original
IPD25CN10NG 100V,35A,N Channel Power MOSFET
IPD25N06S2-40 MOSFET N-Ch 55V 29A DPAK-2 OptiMOS
IPD25N06S4L-30 Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK
Top