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IPD25N06S4L30ATMA2

IPD25N06S4L30ATMA2
Mfr. #:
IPD25N06S4L30ATMA2
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD25N06S4L30ATMA2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD25N06S4L30ATMA2 DatasheetIPD25N06S4L30ATMA2 Datasheet (P4-P6)IPD25N06S4L30ATMA2 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Configuración:
Único
Calificación:
AEC-Q101
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
IPD25N06
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
IPD25N06S4L-30 IPD25N6S4L3XT SP001028636
Unidad de peso:
0.139332 oz
Tags
IPD25N06S4, IPD25N06S, IPD25N0, IPD25N, IPD25, IPD2, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) TO-252
***an P&S
60V,30mΩ,25A,N-Ch Enhancement Mode MOSFET
***ronik
MOSFET 30V 30.0mOHM AECQ TO252 RoHSconf
***Components
MOSFET N-Ch 25A 60V OptiMOS-T2 TO252
***ure Electronics
MOSFET N-CH 60V 25A TO252-3
***ark
Mosfet, Aec-Q101, N-Ch, 60V, 25A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 60V, 25A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:29W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***nell
MOSFET, AEC-Q101, CA-N, 60V, 25A, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:25A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:29W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS T2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
IPD25N06S4L30ATMA2
DISTI # V72:2272_06391069		Infineon Technologies AGTrans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		7009
  • 75000:$0.3137
  • 30000:$0.3187
  • 15000:$0.3237
  • 6000:$0.3288
  • 3000:$0.3338
  • 1000:$0.3390
  • 500:$0.3679
  • 250:$0.4088
  • 100:$0.4542
  • 50:$0.5669
  • 25:$0.6299
  • 10:$0.7698
  • 1:$0.9243
IPD25N06S4L30ATMA2
DISTI # IPD25N06S4L30ATMA2CT-ND		Infineon Technologies AGMOSFET N-CH 60V 25A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6089In Stock
  • 1000:$0.3940
  • 500:$0.4925
  • 100:$0.6230
  • 10:$0.8130
  • 1:$0.9200
IPD25N06S4L30ATMA2
DISTI # IPD25N06S4L30ATMA2DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 25A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6089In Stock
  • 1000:$0.3940
  • 500:$0.4925
  • 100:$0.6230
  • 10:$0.8130
  • 1:$0.9200
IPD25N06S4L30ATMA2
DISTI # IPD25N06S4L30ATMA2TR-ND		Infineon Technologies AGMOSFET N-CH 60V 25A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 25000:$0.3028
  • 12500:$0.3108
  • 5000:$0.3228
  • 2500:$0.3467
IPD25N06S4L30ATMA2
DISTI # 29412193		Infineon Technologies AGTrans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		7009
  • 20:$0.9243
IPD25N06S4L30ATMA2
DISTI # IPD25N06S4L30ATMA2		Infineon Technologies AGTrans MOSFET N-CH 60V 25A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD25N06S4L30ATMA2)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2889
  • 15000:$0.2939
  • 10000:$0.3039
  • 5000:$0.3159
  • 2500:$0.3279
IPD25N06S4L30ATMA2
DISTI # SP001028636		Infineon Technologies AGTrans MOSFET N-CH 60V 25A 3-Pin TO-252 T/R (Alt: SP001028636)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.3209
  • 15000:€0.3459
  • 10000:€0.3839
  • 5000:€0.4309
  • 2500:€0.5089
IPD25N06S4L30ATMA2
DISTI # 43AC3267		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 60V, 25A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes4269
  • 1000:$0.3690
  • 500:$0.3990
  • 250:$0.4300
  • 100:$0.4610
  • 50:$0.5450
  • 25:$0.6290
  • 10:$0.7130
  • 1:$0.8590
IPD25N06S4L30ATMA2
DISTI # 726-IPD25N06S4L30ATM		Infineon Technologies AGMOSFET MOSFET
RoHS: Compliant		11975
  • 1:$0.8500
  • 10:$0.7060
  • 100:$0.4560
  • 1000:$0.3650
  • 2500:$0.3080
  • 10000:$0.2970
  • 25000:$0.2850
IPD25N06S4L-30
DISTI # 726-IPD25N06S4L-30		Infineon Technologies AGMOSFET N-Ch 60V 25A DPAK-2 OptiMOS-T2
RoHS: Compliant		0
    IPD25N06S4L30ATMA2Infineon Technologies AG 
    RoHS: Not Compliant    		766
    • 1000:$0.2800
    • 500:$0.2900
    • 100:$0.3000
    • 25:$0.3200
    • 1:$0.3400
    IPD25N06S4L30ATMA2
    DISTI # 2803391    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 60V, 25A, TO-252
    RoHS: Compliant    		4269
    • 5000:$0.4690
    • 1000:$0.4950
    • 500:$0.5230
    • 250:$0.6050
    • 100:$0.7160
    • 25:$0.8780
    • 5:$1.0100
    IPD25N06S4L30ATMA2
    DISTI # 2803391    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 60V, 25A, TO-2524369
    • 500:£0.2780
    • 250:£0.3170
    • 100:£0.3550
    • 10:£0.6030
    • 1:£0.7560
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    Disponibilidad
    Valores:
    11
    En orden:
    1994
    Ingrese la cantidad:
    El precio actual de IPD25N06S4L30ATMA2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,85 US$
    0,85 US$
    10
    0,71 US$
    7,06 US$
    100
    0,46 US$
    45,60 US$
    1000
    0,36 US$
    365,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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