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IPD25CN10NGATMA1

IPD25CN10NGATMA1
Mfr. #:
IPD25CN10NGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 100V 35A TO252-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD25CN10NGATMA1 Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
G IPD25CN10N SP001127810
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Configuración
Único
Disipación de potencia Pd
71 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
3 ns
Hora de levantarse
4 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
35 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
19 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
13 ns
Tiempo de retardo de encendido típico
10 ns
Qg-Gate-Charge
23 nC
Transconductancia directa-Mín.
38 S
Modo de canal
Mejora
Tags
IPD25CN10N, IPD25CN1, IPD25C, IPD25, IPD2, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 25 mOhm 23 nC OptiMOS™ Power Mosfet - DPAK
***p One Stop Japan
Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 100V, 35A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:71W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Parte # Mfg. Descripción Valores Precio
IPD25CN10NGATMA1
DISTI # V72:2272_06384144		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2400
  • 1000:$0.4714
  • 500:$0.5576
  • 250:$0.5817
  • 100:$0.6438
  • 25:$0.7910
  • 10:$0.7943
  • 1:$0.8987
IPD25CN10NGATMA1
DISTI # IPD25CN10NGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4940In Stock
  • 1000:$0.5736
  • 500:$0.7265
  • 100:$0.9369
  • 10:$1.1850
  • 1:$1.3400
IPD25CN10NGATMA1
DISTI # IPD25CN10NGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4940In Stock
  • 1000:$0.5736
  • 500:$0.7265
  • 100:$0.9369
  • 10:$1.1850
  • 1:$1.3400
IPD25CN10NGATMA1
DISTI # IPD25CN10NGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.5198
IPD25CN10NGATMA1
DISTI # 31433917		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2400
  • 19:$0.8987
IPD25CN10NGATMA1
DISTI # IPD25CN10NGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD25CN10NGATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3889
  • 5000:$0.3749
  • 10000:$0.3609
  • 15000:$0.3489
  • 25000:$0.3429
IPD25CN10NGATMA1
DISTI # SP001127810		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin TO-252 T/R (Alt: SP001127810)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.5839
  • 5000:€0.4779
  • 10000:€0.4379
  • 15000:€0.4039
  • 25000:€0.3759
IPD25CN10NGATMA1
DISTI # 47W3470		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 35A, TO252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1597
  • 1:$0.9400
  • 10:$0.7560
  • 100:$0.5810
  • 500:$0.5130
  • 1000:$0.4680
IPD25CN10NGATMA1
DISTI # 726-IPD25CN10NGATMA1		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		962
  • 1:$1.1100
  • 10:$0.9450
  • 100:$0.7260
  • 500:$0.6420
  • 1000:$0.5070
  • 2500:$0.4490
IPD25CN10NGATMA1
DISTI # 1702266		Infineon Technologies AGMOSFET N-CH 100V 35A OPTIMOS2 DPAK, RL of 25002
  • 1:£827.5000
  • 2:£810.9500
  • 3:£794.7300
IPD25CN10NGATMA1
DISTI # 2212856		Infineon Technologies AGMOSFET, N-CH, 100V, 35A, TO252-3
RoHS: Compliant		1597
  • 5:£0.6320
  • 25:£0.5180
  • 100:£0.3890
  • 250:£0.3660
  • 500:£0.3440
Imagen Parte # Descripción
IPD25CN10NGATMA1

Mfr.#: IPD25CN10NGATMA1

OMO.#: OMO-IPD25CN10NGATMA1

 MOSFET MV POWER MOS
IPD25CN10NGBUMA1

Mfr.#: IPD25CN10NGBUMA1

OMO.#: OMO-IPD25CN10NGBUMA1

 MOSFET N-Ch 100V 35A DPAK-2 OptiMOS 2
IPD25CN10NGATMA1-CUT TAPE

Mfr.#: IPD25CN10NGATMA1-CUT TAPE

OMO.#: OMO-IPD25CN10NGATMA1-CUT-TAPE-1190

 Nuevo y original
IPD25CN10

Mfr.#: IPD25CN10

OMO.#: OMO-IPD25CN10-1190

 Nuevo y original
IPD25CN10N G

Mfr.#: IPD25CN10N G

OMO.#: OMO-IPD25CN10N-G-1190

 MOSFET N-Ch 100V 35A DPAK-2 OptiMOS 2
IPD25CN10NG

Mfr.#: IPD25CN10NG

OMO.#: OMO-IPD25CN10NG-1190

 100V,35A,N Channel Power MOSFET
IPD25CN10NG , 2SD2118TLQ

Mfr.#: IPD25CN10NG , 2SD2118TLQ

OMO.#: OMO-IPD25CN10NG-2SD2118TLQ-1190

 Nuevo y original
IPD25CN10NGATMA1

Mfr.#: IPD25CN10NGATMA1

OMO.#: OMO-IPD25CN10NGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 35A TO252-3
IPD25CN10NGBUMA1

Mfr.#: IPD25CN10NGBUMA1

OMO.#: OMO-IPD25CN10NGBUMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 35A TO252-3
IPD25CN10NGBUMA1 , 2SD21

Mfr.#: IPD25CN10NGBUMA1 , 2SD21

OMO.#: OMO-IPD25CN10NGBUMA1-2SD21-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de IPD25CN10NGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,51 US$
0,51 US$
10
0,49 US$
4,89 US$
100
0,46 US$
46,29 US$
500
0,44 US$
218,60 US$
1000
0,41 US$
411,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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