IPD26N06S2L35ATMA2

Mfr. #:: IPD26N06S2L35ATMA2
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-CH 55V 30A TO252-3
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPD26N06S2L35ATMA2 Ficha de datos
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Tags: IPD26N06S2L3, IPD26N, IPD26, IPD2, IPD

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD26N06S2L35ATMA2 Descripción

***ure Electronics: N-Channel 55 V 35 mOhm OptiMOS® Power-Transistor - PG-TO252-3-11

***ical: Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R

***et: Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) TO-252

***et Europe: Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R

***i-Key: MOSFET N-CH 55V 30A TO252-3

***ronik: N-CH 55V 30A 35mOhm TO252

***ark: Mosfet, Aec-Q101, N-Ch, 55V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.027Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:68W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, AEC-Q101, CA-N, 55V, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:55V; Resistenza di Attivazione Rds(on):0.027ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:68W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPD26N06S2L35ATMA2 DISTI # V72:2272_06391037	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R	2030	1000:$0.2814 500:$0.3025 250:$0.3361 100:$0.3734 25:$0.5571 10:$0.6275 1:$0.7607
IPD26N06S2L35ATMA2 DISTI # V36:1790_06391037	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R	0
IPD26N06S2L35ATMA2 DISTI # IPD26N06S2L35ATMA2CT-ND	Infineon Technologies AG	MOSFET N-CH 55V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2297In Stock	1000:$0.3241 500:$0.4051 100:$0.5125 10:$0.6680 1:$0.7600
IPD26N06S2L35ATMA2 DISTI # IPD26N06S2L35ATMA2DKR-ND	Infineon Technologies AG	MOSFET N-CH 55V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2297In Stock	1000:$0.3241 500:$0.4051 100:$0.5125 10:$0.6680 1:$0.7600
IPD26N06S2L35ATMA2 DISTI # IPD26N06S2L35ATMA2TR-ND	Infineon Technologies AG	MOSFET N-CH 55V 30A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.2491 12500:$0.2557 5000:$0.2655 2500:$0.2852
IPD26N06S2L35ATMA2 DISTI # 30285979	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R	2030	27:$0.7607
IPD26N06S2L35ATMA2 DISTI # SP001063630	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R (Alt: SP001063630) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 12500	25000:€0.3189 15000:€0.3439 10000:€0.3719 5000:€0.4059 2500:€0.4969
IPD26N06S2L35ATMA2 DISTI # IPD26N06S2L35ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Bulk (Alt: IPD26N06S2L35ATMA2) RoHS: Compliant Min Qty: 1471 Container: Bulk	Americas - 0	14710:$0.2159 7355:$0.2189 4413:$0.2269 2942:$0.2359 1471:$0.2439
IPD26N06S2L35ATMA2 DISTI # IPD26N06S2L35ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD26N06S2L35ATMA2) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3339 15000:$0.3399 10000:$0.3519 5000:$0.3649 2500:$0.3789
IPD26N06S2L35ATMA2 DISTI # 34AC1668	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes	5686	1000:$0.3030 500:$0.3280 250:$0.3540 100:$0.3790 50:$0.4480 25:$0.5170 10:$0.5870 1:$0.7070
IPD26N06S2L35ATMA2 DISTI # 726-IPD26N06S2L35ATM	Infineon Technologies AG	MOSFET N-CHANNEL_55/60V RoHS: Compliant	4900	1:$0.7000 10:$0.5810 100:$0.3750 1000:$0.3000 2500:$0.2530
IPD26N06S2L35ATMA2	Infineon Technologies AG	Power Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	405000	1000:$0.2200 500:$0.2400 100:$0.2500 25:$0.2600 1:$0.2800
IPD26N06S2L35ATMA2 DISTI # 2781080	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-252	5726	500:£0.2240 250:£0.2550 100:£0.2860 10:£0.4900 1:£0.6110
IPD26N06S2L35ATMA2 DISTI # 2781080	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-252 RoHS: Compliant	5641	5000:$0.3860 1000:$0.4070 500:$0.4310 250:$0.4970 100:$0.5890 25:$0.7210 5:$0.8280
IPD26N06S2L35ATMA2 DISTI # XSKDRABV0048049	Infineon Technologies AG	SmallSignalBipolarTransistor,0.3AI(C),140VV(BR)CEO,1-Element,NPN,Silicon RoHS: Compliant	10000 in Stock0 on Order	10000:$0.4707 2500:$0.5043

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: IPD26N06S2L35ATMA2 OMO.#: OMO-IPD26N06S2L35ATMA2	MOSFET N-CHANNEL_55/60V
	Mfr.#: IPD26N06S2L35ATMA1 OMO.#: OMO-IPD26N06S2L35ATMA1	MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
	Mfr.#: IPD26N06S2L35ATMA1 OMO.#: OMO-IPD26N06S2L35ATMA1-INFINEON-TECHNOLOGIES	Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
	Mfr.#: IPD26N06S2L-35 OMO.#: OMO-IPD26N06S2L-35-1190	MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
	Mfr.#: IPD26N06S2L35 OMO.#: OMO-IPD26N06S2L35-1190	SmallSignalBipolarTransistor,0.3AI(C),140VV(BR)CEO,1-Element,NPN,Silicon
	Mfr.#: IPD26N06S2L35ATMA2 OMO.#: OMO-IPD26N06S2L35ATMA2-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 30A TO252-3

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IPD26N06S2L35ATMA2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes