PartNumber | IPB80N06S2L06ATMA2 | IPB80N06S2L05ATMA1 | IPB80N06S2L06ATMA1 |
Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS | MOSFET N-CH 55V 80A TO263-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Configuration | Single | Single | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | IPB80N06S2L-06 SP001067880 | IPB80N06S2L-05 IPB80N06S2L05XT SP000219004 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
RoHS | - | Y | - |
Vds Drain Source Breakdown Voltage | - | 55 V | - |
Id Continuous Drain Current | - | 80 A | - |
Rds On Drain Source Resistance | - | 3.3 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 230 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 300 W | - |
Channel Mode | - | Enhancement | - |
Tradename | - | OptiMOS | - |
Fall Time | - | 90 ns | - |
Rise Time | - | 93 ns | - |
Typical Turn Off Delay Time | - | 67 ns | - |
Typical Turn On Delay Time | - | 19 ns | - |