IPB80N06S2L06ATMA2

IPB80N06S2L06ATMA2
Mfr. #:
IPB80N06S2L06ATMA2
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CHANNEL_55/60V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB80N06S2L06ATMA2 Ficha de datos
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HTML Datasheet:
IPB80N06S2L06ATMA2 DatasheetIPB80N06S2L06ATMA2 Datasheet (P4-P6)IPB80N06S2L06ATMA2 Datasheet (P7-P8)
ECAD Model:
Más información:
IPB80N06S2L06ATMA2 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Configuración:
Único
Calificación:
AEC-Q101
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
IPB80N06S2L-06 SP001067880
Unidad de peso:
0.139332 oz
Tags
IPB80N06S2L06, IPB80N06S2L0, IPB80N06S2L, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S2L06ATMA1
***ure Electronics
Single N-Channel 55 V 6.3 mOhm 150 nC OptiMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 55V 80A TO263-3
***ronik
N-CH 55V 80A 6mOhm TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descripción Valores Precio
IPB80N06S2L06ATMA2
DISTI # V36:1790_06383908
Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R0
  • 1000:$1.1000
IPB80N06S2L06ATMA2
DISTI # IPB80N06S2L06ATMA2CT-ND
Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
623In Stock
  • 500:$1.2266
  • 100:$1.4930
  • 10:$1.8570
  • 1:$2.0700
IPB80N06S2L06ATMA2
DISTI # IPB80N06S2L06ATMA2DKR-ND
Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
623In Stock
  • 500:$1.2266
  • 100:$1.4930
  • 10:$1.8570
  • 1:$2.0700
IPB80N06S2L06ATMA2
DISTI # IPB80N06S2L06ATMA2TR-ND
Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 10000:$0.8620
  • 5000:$0.8847
  • 2000:$0.9187
  • 1000:$0.9867
IPB80N06S2L06ATMA2
DISTI # IPB80N06S2L06ATMA2
Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2L06ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$1.0900
  • 4000:$1.1900
  • 6000:$1.1900
  • 1000:$1.2900
  • 2000:$1.2900
IPB80N06S2L06ATMA2
DISTI # SP001067880
Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R (Alt: SP001067880)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 10000:€1.0900
  • 4000:€1.1900
  • 6000:€1.1900
  • 2000:€1.2900
  • 1000:€1.6900
IPB80N06S2L06ATMA2
DISTI # 726-IPB80N06S2L06ATM
Infineon Technologies AGMOSFET N-CHANNEL_55/60V159
  • 1:$2.7700
  • 10:$2.3600
  • 100:$1.8800
  • 500:$1.6500
  • 1000:$1.3600
  • 2000:$1.2700
  • 5000:$1.2200
Imagen Parte # Descripción
ATMEGA328P-AUR

Mfr.#: ATMEGA328P-AUR

OMO.#: OMO-ATMEGA328P-AUR

8-bit Microcontrollers - MCU AVR 32K FLSH 2K SRAM 1KB EE-20MHz IND
ATTINY20-MMHR

Mfr.#: ATTINY20-MMHR

OMO.#: OMO-ATTINY20-MMHR

8-bit Microcontrollers - MCU AVR 2KB FL 128B SRAM ADC 2T-12MHz, IND
CRCW1210510RFKEAHP

Mfr.#: CRCW1210510RFKEAHP

OMO.#: OMO-CRCW1210510RFKEAHP

Thick Film Resistors - SMD 3/4watt 510ohms 1% High Power AEC-Q200
CRCW0603220RJNEA

Mfr.#: CRCW0603220RJNEA

OMO.#: OMO-CRCW0603220RJNEA

Thick Film Resistors - SMD 1/10watt 220ohms 5%
C0805C104K1RACTU

Mfr.#: C0805C104K1RACTU

OMO.#: OMO-C0805C104K1RACTU

Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 0.1uF X7R 0805 10%
87437-0273

Mfr.#: 87437-0273

OMO.#: OMO-87437-0273-410

Headers & Wire Housings 1.5MM W-T-B HDR
ATTINY20-MMHR

Mfr.#: ATTINY20-MMHR

OMO.#: OMO-ATTINY20-MMHR-MICROCHIP-TECHNOLOGY

Microcontrollers - MCU 8-bit Microcontrollers - MCU AVR 2KB FL 128B SRAM ADC 2T-12MHz, IND
ATMEGA328P-AUR

Mfr.#: ATMEGA328P-AUR

OMO.#: OMO-ATMEGA328P-AUR-MICROCHIP-TECHNOLOGY

Microcontrollers - MCU 8-bit Microcontrollers - MCU AVR 32K FLSH 2K SRAM 1KB EE-20MHz IND
LMK212B7105KGHT

Mfr.#: LMK212B7105KGHT

OMO.#: OMO-LMK212B7105KGHT-TAIYO-YUDEN

Multilayer Ceramic Capacitors MLCC - SMD/SMT AEC-Q200 0805 X7R 10V 1uF 10%
CC0603ZRY5V9BB224

Mfr.#: CC0603ZRY5V9BB224

OMO.#: OMO-CC0603ZRY5V9BB224-YAGEO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 220nF Y5V -20/+80% 50V
Disponibilidad
Valores:
47
En orden:
2030
Ingrese la cantidad:
El precio actual de IPB80N06S2L06ATMA2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,77 US$
2,77 US$
10
2,36 US$
23,60 US$
100
1,88 US$
188,00 US$
500
1,65 US$
825,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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