IPB80N06S2L07ATMA3

Mfr. #:: IPB80N06S2L07ATMA3
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-CH 55V 80A TO263-3
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPB80N06S2L07ATMA3 Ficha de datos
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Tags: IPB80N06S2L0, IPB80N06S2L, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB80N06S2L07ATMA3 Descripción

***Components: On a Reel of 1000, N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S2L07ATMA3

***ure Electronics: Single N-Channel 55 V 6.7 mOhm 130 nC OptiMOS Power Mosfet - TO-263-3

***ical: Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263

***et Europe: Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R

***ronik: MOSFET 55V 6.7mOHM AECQ TO263

***i-Key: MOSFET N-CH 55V 80A TO263-3

***ark: Mosfet, Aec-Q101, N-Ch, 55V, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.0053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 55V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:210W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, AEC-Q101, CA-N, 55V, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:55V; Resistenza di Attivazione Rds(on):0.0053ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:210W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

IPB80N06S2L07ATMA3 Más información

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPB80N06S2L07ATMA3 DISTI # V72:2272_06383888	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R	996	500:$1.0233 250:$1.1100 100:$1.1980 25:$1.4038 10:$1.5149 1:$1.9741
IPB80N06S2L07ATMA3 DISTI # IPB80N06S2L07ATMA3CT-ND	Infineon Technologies AG	MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB80N06S2L07ATMA3 DISTI # IPB80N06S2L07ATMA3DKR-ND	Infineon Technologies AG	MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB80N06S2L07ATMA3 DISTI # IPB80N06S2L07ATMA3TR-ND	Infineon Technologies AG	MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$0.9365
IPB80N06S2L07ATMA3 DISTI # 32669678	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R	1000	1000:$1.1232
IPB80N06S2L07ATMA3 DISTI # 31440723	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R	996	500:$1.0233 250:$1.1100 100:$1.1980 25:$1.4038 10:$1.5149 9:$1.9741
IPB80N06S2L07ATMA3 DISTI # IPB80N06S2L07ATMA3	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S2L07ATMA3) RoHS: Compliant Min Qty: 439 Container: Bulk	Americas - 0	4390:$0.7239 2195:$0.7369 1317:$0.7629 878:$0.7909 439:$0.8209
IPB80N06S2L07ATMA3 DISTI # IPB80N06S2L07ATMA3	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2L07ATMA3) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$1.0900 10000:$1.0900 2000:$1.1900 4000:$1.1900 1000:$1.2900
IPB80N06S2L07ATMA3 DISTI # SP001067890	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R (Alt: SP001067890) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.0489 6000:€1.1239 4000:€1.2099 2000:€1.3109 1000:€1.5729
IPB80N06S2L07ATMA3 DISTI # 34AC1661	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes	55	500:$1.0900 250:$1.1700 100:$1.2500 50:$1.3500 25:$1.4500 10:$1.5600 1:$1.8300
IPB80N06S2L07ATMA3 DISTI # 726-IPB80N06S2L07ATM	Infineon Technologies AG	MOSFET N-CHANNEL_55/60V RoHS: Compliant	1615	1:$1.8100 10:$1.5400 100:$1.2400 500:$1.0800 1000:$0.8920 2000:$0.8310 5000:$0.8000 10000:$0.7690
IPB80N06S2L07ATMA3	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 55V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	1741	1000:$0.7500 500:$0.7900 100:$0.8200 25:$0.8600 1:$0.9200
IPB80N06S2L07ATMA3 DISTI # 1107147P	Infineon Technologies AG	MOSFET N-CHANNEL OPTIMOS 55V 80A TO263, RL	1440	500:£0.7880 200:£0.8430 100:£0.8980 20:£1.0090
IPB80N06S2L07ATMA3 DISTI # IPB80N06S2L07	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,55V,80A,210W,PG-TO263-3	936	100:$1.0500 25:$1.1700 5:$1.3200 1:$1.4600
IPB80N06S2L07ATMA3 DISTI # 2781073	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-263 RoHS: Compliant	55	5000:$1.2900 1000:$1.3500 500:$1.4300 250:$1.6500 100:$1.9600 25:$2.4000 5:$2.7500
IPB80N06S2L07ATMA3 DISTI # 2781073	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-263	1653	500:£0.8240 250:£0.8840 100:£0.9440 10:£1.2100 1:£1.5700

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El precio actual de IPB80N06S2L07ATMA3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,12 US$~~; ~~1,12 US$~~

10: ~~1,07 US$~~; ~~10,66 US$~~

100: ~~1,01 US$~~; ~~101,02 US$~~

500: ~~0,95 US$~~; ~~477,05 US$~~

1000: ~~0,90 US$~~; ~~898,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IPB80N06S2L07ATMA3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes