IPB80N06S2L09ATMA2

IPB80N06S2L09ATMA2
Mfr. #:
IPB80N06S2L09ATMA2
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CHANNEL_55/60V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB80N06S2L09ATMA2 Ficha de datos
Entrega:
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HTML Datasheet:
IPB80N06S2L09ATMA2 DatasheetIPB80N06S2L09ATMA2 Datasheet (P4-P6)IPB80N06S2L09ATMA2 Datasheet (P7-P8)
ECAD Model:
Más información:
IPB80N06S2L09ATMA2 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Configuración:
Único
Calificación:
AEC-Q101
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
IPB80N06S2L-09 SP001061720
Unidad de peso:
0.139332 oz
Tags
IPB80N06S2L0, IPB80N06S2L, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S2L09ATMA1
***et
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263
***i-Key
MOSFET N-CH 55V 80A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descripción Valores Precio
IPB80N06S2L09ATMA2
DISTI # V36:1790_06384219
Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R0
    IPB80N06S2L09ATMA2
    DISTI # IPB80N06S2L09ATMA2-ND
    Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 1000:$0.7672
    IPB80N06S2L09ATMA2
    DISTI # IPB80N06S2L09ATMA2
    Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2L09ATMA2)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 10000:$0.6399
    • 6000:$0.6509
    • 4000:$0.6739
    • 2000:$0.6989
    • 1000:$0.7259
    IPB80N06S2L09ATMA2
    DISTI # 726-IPB80N06S2L09ATM
    Infineon Technologies AGMOSFET N-CHANNEL_55/60V980
    • 1:$1.4900
    • 10:$1.2600
    • 100:$1.0100
    • 500:$0.8820
    • 1000:$0.7310
    • 2000:$0.6810
    • 5000:$0.6560
    • 10000:$0.6300
    Imagen Parte # Descripción
    MC33025DWR2G

    Mfr.#: MC33025DWR2G

    OMO.#: OMO-MC33025DWR2G

    Switching Controllers Dual Output Voltage or Current Mode PWM
    1534046-1

    Mfr.#: 1534046-1

    OMO.#: OMO-1534046-1

    Automotive Connectors TAB HEADER ASSY 32POS
    BFC237011184

    Mfr.#: BFC237011184

    OMO.#: OMO-BFC237011184

    Film Capacitors .18uF 10% 63volts
    BFC237011124

    Mfr.#: BFC237011124

    OMO.#: OMO-BFC237011124-VISHAY

    Film Capacitors .12uF 10% 63volts
    BFC237011184

    Mfr.#: BFC237011184

    OMO.#: OMO-BFC237011184-VISHAY

    Film Capacitors .18uF 10% 63volts
    1534046-1

    Mfr.#: 1534046-1

    OMO.#: OMO-1534046-1-TE-CONNECTIVITY

    Automotive Connectors TAB HEADER ASSY 32POS
    MC33025DWR2G

    Mfr.#: MC33025DWR2G

    OMO.#: OMO-MC33025DWR2G-ON-SEMICONDUCTOR

    Switching Controllers Dual Output Voltage or Current Mode PWM
    Disponibilidad
    Valores:
    980
    En orden:
    2963
    Ingrese la cantidad:
    El precio actual de IPB80N06S2L09ATMA2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,25 US$
    2,25 US$
    10
    1,91 US$
    19,10 US$
    100
    1,53 US$
    153,00 US$
    500
    1,34 US$
    670,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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