 | | | |
| PartNumber | IPB200N15N3 G | IPB200N25N3 G | IPB200N15N3GATMA1 |
| Description | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | 250 V | - |
| Id Continuous Drain Current | 50 A | 64 A | - |
| Rds On Drain Source Resistance | 20 mOhms | 17.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 31 nC | 86 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 150 W | 300 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | OptiMOS 3 Power-Transistor | - |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 57 S, 29 S | 61 S | - |
| Fall Time | 6 ns | 12 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 20 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 23 ns | 45 ns | - |
| Typical Turn On Delay Time | 14 ns | 18 ns | - |
| Part # Aliases | IPB200N15N3GATMA1 IPB2N15N3GXT SP000414740 | IPB200N25N3GATMA1 IPB2N25N3GXT SP000677896 | IPB200N15N3 IPB2N15N3GXT SP000414740 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB200N15N3 G | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | |
| IPB200N25N3 G | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | ||
| IPB200N25N3GATMA1 | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | ||
| IPB200N15N3GATMA1 | MOSFET N-CH 150V 50A TO263-3 | ||
| IPB200N25N3GATMA1 | MOSFET N-CH 250V 64A TO263-3 | ||
Infineon Technologies |
IPB200N15N3GATMA1 | MOSFET MV POWER MOS | |
| IPB200N25N3G | POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | ||
| IPB200N15N3GATMA1-CUT TAPE | Nuevo y original | ||
| IPB200N15N | Nuevo y original | ||
| IPB200N15N3 | Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB200N15N3 G | Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263 | ||
| IPB200N15N3G | Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB200N15N3G 200N15N | Nuevo y original | ||
| IPB200N15N3GS | Nuevo y original | ||
| IPB200N15N3S | Nuevo y original | ||
| IPB200N25N | Nuevo y original | ||
| IPB200N25N3 | Nuevo y original | ||
| IPB200N25N3 G | Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: IPB200N25N3 G) | ||
| IPB200N25N3 G(SP0006778 | Nuevo y original | ||
| IPB200N25N3G(SP00067789 | Nuevo y original | ||
| IPB200N25N3G(SP000677896 | Nuevo y original | ||
| IPB200N25N3GXT | Nuevo y original | ||
| IPB20N03L | Nuevo y original | ||
| IPB20N10N5 | Nuevo y original | ||
| IPB20N60C3 | Nuevo y original |