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IPB200N25N3 G

IPB200N25N3 G
Mfr. #:
IPB200N25N3 G
Fabricante:
Infineon Technologies
Descripción:
Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: IPB200N25N3 G)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB200N25N3 G Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPB200N25N3 G más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 3
embalaje
Carrete
Alias ​​de parte
IPB200N25N3GATMA1 IPB200N25N3GXT SP000677896
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
300 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns
Hora de levantarse
20 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
64 A
Vds-Drain-Source-Breakdown-Voltage
250 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
20 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
45 ns
Tiempo de retardo de encendido típico
18 ns
Qg-Gate-Charge
64 nC
Transconductancia directa-Mín.
122 S 61 S
Tags
IPB200N25N3G, IPB200N25N3, IPB200N2, IPB200, IPB20, IPB2, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descripción Valores Precio
IPB200N25N3GATMA1
DISTI # V72:2272_06377749		Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		35
  • 25:$5.2980
  • 10:$5.5550
  • 1:$6.7496
IPB200N25N3GATMA1
DISTI # V36:1790_06377749		Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$3.0230
  • 500000:$3.0250
  • 100000:$3.2410
  • 10000:$3.6160
  • 1000:$3.6780
IPB200N25N3GATMA1
DISTI # IPB200N25N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 2000:$3.5419
  • 1000:$3.6781
IPB200N25N3GATMA1
DISTI # IPB200N25N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$4.3497
  • 100:$4.9952
  • 10:$6.0330
  • 1:$6.6800
IPB200N25N3GATMA1
DISTI # IPB200N25N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$4.3497
  • 100:$4.9952
  • 10:$6.0330
  • 1:$6.6800
IPB200N25N3GATMA1
DISTI # 33713077		Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$5.4688
IPB200N25N3GATMA1
DISTI # 32885127		Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		35
  • 2:$6.7496
IPB200N25N3 G
DISTI # IPB200N25N3 G		Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: IPB200N25N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 0
  • 50000:$3.2846
  • 25000:$3.3267
  • 10000:$3.3699
  • 5000:$3.4142
  • 3000:$3.5065
  • 2000:$3.6039
  • 1000:$3.7069
IPB200N25N3GATMA1
DISTI # IPB200N25N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N25N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$3.1900
  • 6000:$3.2900
  • 4000:$3.3900
  • 2000:$3.5900
  • 1000:$3.6900
IPB200N25N3GATMA1
DISTI # SP000677896		Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000677896)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€2.7900
  • 6000:€2.9900
  • 4000:€3.1900
  • 2000:€3.2900
  • 1000:€3.4900
IPB200N25N3GATMA1
DISTI # 79X1433		Infineon Technologies AGMOSFET, N-CH, 250V, 64A, TO-263- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.0175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes186
  • 500:$4.0600
  • 250:$4.4500
  • 100:$4.6600
  • 50:$5.0100
  • 25:$5.3700
  • 10:$5.6400
  • 1:$6.2300
IPB200N25N3 G
DISTI # 726-IPB200N25N3GXT		Infineon Technologies AGMOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
RoHS: Compliant		0
  • 1:$6.1700
  • 10:$5.5800
  • 25:$5.3200
  • 100:$4.6100
  • 250:$4.4100
  • 500:$4.0200
  • 1000:$3.5000
  • 2000:$3.3700
IPB200N25N3GATMA1
DISTI # 726-IPB200N25N3GATMA		Infineon Technologies AGMOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
RoHS: Compliant		0
  • 1:$6.1700
  • 10:$5.5800
  • 25:$5.3200
  • 100:$4.6100
  • 250:$4.4100
  • 500:$4.0200
  • 1000:$3.5000
  • 2000:$3.3700
IPB200N25N3GATMA1Infineon Technologies AGSingle N-Channel 250 V 20 mOhm 64 nC OptiMOS Power Mosfet - D2PAK
RoHS: Not Compliant		1000Reel
  • 1000:$3.3300
IPB200N25N3GInfineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB200
  • 112:$8.0025
  • 27:$8.9725
  • 1:$14.5500
IPB200N25N3GATMA1
DISTI # 8986870		Infineon Technologies AGMOSFET N-CHANNEL 250V 64A OPTIMOS TO263, PK156
  • 250:£3.4250
  • 100:£3.6100
  • 50:£3.8850
  • 10:£4.1650
  • 2:£5.2500
IPB200N25N3GInfineon Technologies AG 
RoHS: Compliant		595
    IPB200N25N3 G
    DISTI # TMOSP9347    		Infineon Technologies AGN-CH 250V64A20mOhm TO263-3
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 1000:$4.7800
    IPB200N25N3GATMA1
    DISTI # 2432726    		Infineon Technologies AGMOSFET, N CH, 250V, 64A, TO-263-30
    • 500:£3.1300
    • 250:£3.4300
    • 100:£3.5900
    • 10:£4.1400
    • 1:£5.3000
    IPB200N25N3GATMA1
    DISTI # XSFP00000050298    		Infineon Technologies AG 
    RoHS: Compliant    		2000 in Stock0 on Order
    • 2000:$4.4400
    • 1000:$4.7600
    IPB200N25N3GATMA1
    DISTI # 2432726RL    		Infineon Technologies AGMOSFET, N CH, 250V, 64A, TO-263-3
    RoHS: Compliant    		0
    • 25:$8.0200
    • 10:$8.4100
    • 1:$9.3000
    IPB200N25N3GATMA1
    DISTI # 2432726    		Infineon Technologies AGMOSFET, N CH, 250V, 64A, TO-263-3
    RoHS: Compliant    		0
    • 25:$8.0200
    • 10:$8.4100
    • 1:$9.3000
    IPB200N25N3GInfineon Technologies AG250V,64A,N-channel Power MOSFET500
    • 1:$6.2000
    • 100:$5.1700
    • 500:$4.5600
    • 1000:$4.4300
    IPB200N25N3 GInfineon Technologies AGRoHS(ship within 1day)250
    • 1:$6.9800
    • 10:$5.9400
    • 50:$5.2400
    • 100:$5.0300
    • 500:$4.9600
    • 1000:$4.8500
    Imagen Parte # Descripción
    IPB200N25N3GATMA1

    Mfr.#: IPB200N25N3GATMA1

    OMO.#: OMO-IPB200N25N3GATMA1

    		 MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
    IPB200N25N3G

    Mfr.#: IPB200N25N3G

    OMO.#: OMO-IPB200N25N3G-1190

    		 POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
    IPB200N15N3 G

    Mfr.#: IPB200N15N3 G

    OMO.#: OMO-IPB200N15N3-G-1190

    		 Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263
    IPB200N15N3G 200N15N

    Mfr.#: IPB200N15N3G 200N15N

    OMO.#: OMO-IPB200N15N3G-200N15N-1190

    		 Nuevo y original
    IPB200N15N3GATMA1

    Mfr.#: IPB200N15N3GATMA1

    OMO.#: OMO-IPB200N15N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 150V 50A TO263-3
    IPB200N25N

    Mfr.#: IPB200N25N

    OMO.#: OMO-IPB200N25N-1190

    		 Nuevo y original
    IPB200N25N3 G(SP0006778

    Mfr.#: IPB200N25N3 G(SP0006778

    OMO.#: OMO-IPB200N25N3-G-SP0006778-1190

    		 Nuevo y original
    IPB200N25N3G(SP00067789

    Mfr.#: IPB200N25N3G(SP00067789

    OMO.#: OMO-IPB200N25N3G-SP00067789-1190

    		 Nuevo y original
    IPB200N25N3GATMA1

    Mfr.#: IPB200N25N3GATMA1

    OMO.#: OMO-IPB200N25N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 250V 64A TO263-3
    IPB200N25N3GXT

    Mfr.#: IPB200N25N3GXT

    OMO.#: OMO-IPB200N25N3GXT-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de IPB200N25N3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,68 US$
    4,68 US$
    10
    4,45 US$
    44,46 US$
    100
    4,21 US$
    421,20 US$
    500
    3,98 US$
    1 989,00 US$
    1000
    3,74 US$
    3 744,00 US$
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