IPB200N15N3

Mfr. #:: IPB200N15N3
Fabricante:: Rochester Electronics, LLC
Descripción:: Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPB200N15N3 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante: Infineon Technologies

categoria de producto: Transistores - FET, MOSFET - Sencillo

Serie: OptiMOS 3

embalaje: Carrete

Alias de parte: IPB200N15N3GATMA1 IPB200N15N3GXT SP000414740

Unidad de peso: 0.139332 oz

Estilo de montaje: SMD / SMT

Nombre comercial: OptiMOS

Paquete-Estuche: TO-252-3

Tecnología: Si

Número de canales: 1 Channel

Configuración: Único

Tipo transistor: 1 N-Channel

Disipación de potencia Pd: 150 W

Temperatura máxima de funcionamiento: + 175 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 6 ns

Hora de levantarse: 11 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 50 A

Vds-Drain-Source-Breakdown-Voltage: 150 V

Vgs-th-Gate-Source-Threshold-Voltage: 4 V

Resistencia a la fuente de desagüe de Rds: 20 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 23 ns

Tiempo de retardo de encendido típico: 14 ns

Qg-Gate-Charge: 31 nC

Transconductancia directa-Mín.: 57 S 29 S

Modo de canal: Mejora

Tags: IPB200N15N3, IPB200N1, IPB200, IPB20, IPB2, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB200N15N3 Descripción

***or: N-CHANNEL POWER MOSFET

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPB200N15N3GATMA1 DISTI # 31077231	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	4000	2000:$1.2425 1000:$1.3875
IPB200N15N3 G DISTI # 30579106	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263 RoHS: Compliant	1000	500:$1.6575 100:$1.8870 50:$2.0145 10:$2.3843
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1999In Stock	500:$1.8473 100:$2.3751 10:$2.9560 1:$3.2700
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1999In Stock	500:$1.8473 100:$2.3751 10:$2.9560 1:$3.2700
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	1000:$1.4861
IPB200N15N3 G DISTI # C1S322000088900	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	100:$1.4800 50:$1.5800 10:$1.8700 1:$2.2000
IPB200N15N3GATMA1 DISTI # C1S322000281482	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	4000	1000:$1.3800
IPB200N15N3 G DISTI # SP000414740	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.8900 2000:€1.4900 4000:€1.1900 6000:€1.0900 10000:€1.0900
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.2900 2000:$1.1900 4000:$1.1900 6000:$1.1900 10000:$1.0900
IPB200N15N3GATMA1 DISTI # SP000414740	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.5199 2000:€1.2669 4000:€1.1689 6000:€1.0859 10000:€1.0129
IPB200N15N3GATMA1 DISTI # 60R2679	Infineon Technologies AG	MOSFET, N CH, 150V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes	0	1:$2.8600 10:$2.5700 100:$2.0600 500:$1.6900
IPB200N15N3 G DISTI # 726-IPB200N15N3G	Infineon Technologies AG	MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant	0	1:$2.7500 10:$2.3300 100:$1.8700 500:$1.6400 1000:$1.3600
IPB200N15N3	Infineon Technologies AG	RoHS: Not Compliant	101	1000:$0.6600 500:$0.6900 100:$0.7200 25:$0.7500 1:$0.8100
IPB200N15N3G	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	127	1000:$1.1200 500:$1.1800 100:$1.2300 25:$1.2800 1:$1.3800
IPB200N15N3GATMA1 DISTI # 7545443	Infineon Technologies AG	MOSFET N-CHANNEL 150V 50A OPTIMOS3 TO263, PK	286	2:£2.0250 10:£1.6050 50:£1.4450 250:£1.2850 500:£1.1250
IPB200N15N3GATMA1 DISTI # 1775559	Infineon Technologies AG	MOSFET, N CH, 50A, 150V, PG-TO263-3 RoHS: Compliant	954	1:£2.0500 10:£1.4600 100:£1.3800 250:£1.3000 500:£1.1400
IPB200N15N3G DISTI # XSKDRABV0030580	INF	RoHS: Compliant	720	1000:$1.9000

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: IPB200N15N3 G OMO.#: OMO-IPB200N15N3-G	MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3
	Mfr.#: IPB200N25N3 G OMO.#: OMO-IPB200N25N3-G	MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
	Mfr.#: IPB200N25N3G OMO.#: OMO-IPB200N25N3G-1190	POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
	Mfr.#: IPB200N15N3 G OMO.#: OMO-IPB200N15N3-G-1190	Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263
	Mfr.#: IPB200N15N3GATMA1 OMO.#: OMO-IPB200N15N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 50A TO263-3
	Mfr.#: IPB200N15N3GS OMO.#: OMO-IPB200N15N3GS-1190	Nuevo y original
	Mfr.#: IPB200N25N3 OMO.#: OMO-IPB200N25N3-1190	Nuevo y original
	Mfr.#: IPB200N25N3GATMA1 OMO.#: OMO-IPB200N25N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 250V 64A TO263-3
	Mfr.#: IPB200N25N3GXT OMO.#: OMO-IPB200N25N3GXT-1190	Nuevo y original
	Mfr.#: IPB20N03L OMO.#: OMO-IPB20N03L-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 5000
Ingrese la cantidad:

El precio actual de IPB200N15N3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,95 US$~~; ~~0,95 US$~~

10: ~~0,90 US$~~; ~~9,05 US$~~

100: ~~0,86 US$~~; ~~85,71 US$~~

500: ~~0,81 US$~~; ~~404,75 US$~~

1000: ~~0,76 US$~~; ~~761,90 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IPB200N15N3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes