 | | | |
| PartNumber | FQB7N60TM | FQB7N20LTM | FQB7N30TM |
| Description | MOSFET 600V N-Channel QFET | MOSFET 200V N-Ch QFET Logic Level | MOSFET 300V N-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 200 V | 300 V |
| Id Continuous Drain Current | 7.4 A | 6.5 A | 7 A |
| Rds On Drain Source Resistance | 1 Ohms | 750 mOhms | 700 mOhms |
| Vgs Gate Source Voltage | 30 V | 20 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 3.13 W | 3.13 W | 3.13 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 4.83 mm | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FQB7N60 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Width | 9.65 mm | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 6.4 S | - | 4.3 S |
| Fall Time | 60 ns | 65 ns | 35 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 80 ns | 125 ns | 75 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 65 ns | 20 ns | 25 ns |
| Typical Turn On Delay Time | 30 ns | 12 ns | 13 ns |
| Unit Weight | 0.046296 oz | 0.011640 oz | 0.011640 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB7N60TM | MOSFET 600V N-Channel QFET | |
| FQB7N20LTM | MOSFET 200V N-Ch QFET Logic Level | ||
| FQB7N60TM-WS | MOSFET 600V 7.4A 1Ohm N-Channel | ||
| FQB7N65CTM | MOSFET 650V 7A NCH MOSFET | ||
| FQB7N30TM | MOSFET 300V N-Channel QFET | ||
| FQB7N10 | Nuevo y original | ||
| FQB7N10L | Nuevo y original | ||
| FQB7N10LT1 | Nuevo y original | ||
| FQB7N10TM-NL | Nuevo y original | ||
| FQB7N10TMFSC | Nuevo y original | ||
| FQB7N20 | Nuevo y original | ||
| FQB7N30 | Nuevo y original | ||
| FQB7N30TM-NL | Nuevo y original | ||
| FQB7N40 | Nuevo y original | ||
| FQB7N60 | Nuevo y original | ||
| FQB7N60M | Nuevo y original | ||
| FQB7N60TM-NL | Nuevo y original | ||
| FQB7N60Z | Nuevo y original | ||
| FQB7N65 | Nuevo y original | ||
| FQB7N65C | Nuevo y original | ||
| FQB7N80 | Nuevo y original | ||
| FQB7N80 7N80 7A 800V | Nuevo y original | ||
| FQB7N80TM | Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FQB7N80TM-NL | Nuevo y original | ||
| FQB7N60TM_WS | RF Bipolar Transistors MOSFET 600V 7.4A 1Ohm N-Channel | ||
ON Semiconductor |
FQB7N10LTM | MOSFET N-CH 100V 7.3A D2PAK | |
| FQB7N10TM | MOSFET N-CH 100V 7.3A D2PAK | ||
| FQB7N30TM | MOSFET N-CH 300V 7A D2PAK | ||
| FQB7N60TM-WS | MOSFET N-CH 600V 7.4A D2PAK | ||
| FQB7N65CTM | MOSFET N-CH 650V 7A D2PAK | ||
| FQB7N80TM_AM002 | MOSFET N-CH 800V 6.6A D2PAK | ||
| FQB7N60TM | Darlington Transistors MOSFET 600V N-Channel QFET | ||
| FQB7N20LTM | MOSFET N-CH 200V 6.5A D2PAK | ||
| FQB7N20TM | MOSFET N-CH 200V 6.6A D2PAK |