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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| FQB7N80TM_AM002 DISTI # FQB7N80TM_AM002-ND | ON Semiconductor | MOSFET N-CH 800V 6.6A D2PAK Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FQB7N80TM DISTI # FQB7N80TM | ON Semiconductor | - Bulk (Alt: FQB7N80TM) RoHS: Not Compliant Min Qty: 285 Container: Bulk | Americas - 0 |
|
| FQB7N80TM DISTI # 512-FQB7N80TM | ON Semiconductor | MOSFET RoHS: Not compliant | 0 | |
| FQB7N80TM_AM002 DISTI # 512-FQB7N80TM_AM002 | ON Semiconductor | MOSFET 800V N-Channel QFET RoHS: Compliant | 0 | |
| FQB7N80TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 188 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: FQB7N80 OMO.#: OMO-FQB7N80-1190 |
Nuevo y original |
|
|
Mfr.#: FQB7N80 7N80 7A 800V |
Nuevo y original |
|
|
Mfr.#: FQB7N80TM OMO.#: OMO-FQB7N80TM-1190 |
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: FQB7N80TM-NL OMO.#: OMO-FQB7N80TM-NL-1190 |
Nuevo y original |
|
Mfr.#: FQB7N80TM_AM002 |
MOSFET N-CH 800V 6.6A D2PAK |