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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| FQB7N10TM DISTI # FQB7N10TM-ND | ON Semiconductor | MOSFET N-CH 100V 7.3A D2PAK Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FQB7N10TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.3A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1503 |
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| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: FQB7N65CTM OMO.#: OMO-FQB7N65CTM |
MOSFET 650V 7A NCH MOSFET |
|
Mfr.#: FQB7N10LTM |
MOSFET N-CH 100V 7.3A D2PAK |
|
Mfr.#: FQB7N40 OMO.#: OMO-FQB7N40-1190 |
Nuevo y original |
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Mfr.#: FQB7N60 OMO.#: OMO-FQB7N60-1190 |
Nuevo y original |
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Mfr.#: FQB7N60TM-NL OMO.#: OMO-FQB7N60TM-NL-1190 |
Nuevo y original |
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Mfr.#: FQB7N60Z OMO.#: OMO-FQB7N60Z-1190 |
Nuevo y original |
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Mfr.#: FQB7N65C OMO.#: OMO-FQB7N65C-1190 |
Nuevo y original |
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Mfr.#: FQB7N80 OMO.#: OMO-FQB7N80-1190 |
Nuevo y original |
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Mfr.#: FQB7N80 7N80 7A 800V |
Nuevo y original |
|
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Mfr.#: FQB7N80TM OMO.#: OMO-FQB7N80TM-1190 |
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |