 |  |  | |
| PartNumber | CSD86311W1723 | CSD86330EVM-717 | CSD86330 |
| Description | MOSFET Dual N-Channel Nex FET Pwr MOSFET | Power Management IC Development Tools CSD86330EVM-717 | |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | Power Management IC Development Tools | Evaluation Boards - DC/DC & AC/DC (Off-Line) SMPS |
| RoHS | Y | N/A | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DSBGA-12 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 42 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 3.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Dual | - | - |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | - | - |
| Height | 0.62 mm | - | - |
| Length | 2.32 mm | - | - |
| Series | CSD86311W1723 | CSD86330 | NexFET |
| Transistor Type | 2 N-Channel | - | - |
| Width | 1.74 mm | - | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Forward Transconductance Min | 6.4 S | - | - |
| Fall Time | 2.9 ns | - | - |
| Product Type | MOSFET | Power Management IC Development Tools | - |
| Rise Time | 4.3 ns | - | - |
| Factory Pack Quantity | 3000 | 1 | - |
| Subcategory | MOSFETs | Development Tools | - |
| Typical Turn Off Delay Time | 13.2 ns | - | - |
| Typical Turn On Delay Time | 5.4 ns | - | - |
| Unit Weight | 0.000145 oz | - | - |
| Product | - | Evaluation Boards | Evaluation Boards |
| Type | - | Gate Drivers | Gate Drivers |
| Tool Is For Evaluation Of | - | CSD86330 | CSD86330 |
| Main Purpose | - | - | DC/DC, Step Down |
| Voltage Input | - | - | 9 V ~ 13.2 V |
| Frequency Switching | - | - | 500kHz |
| Current Output | - | - | 5A |
| Voltage Output | - | - | 1.2V |
| Regulator Topology | - | - | Buck |
| Power Output | - | - | - |
| Supplied Contents | - | - | Board |
| Utilized IC Part | - | - | CSD86330, TPS53219 |
| Board Type | - | - | Fully Populated |
| Outputs and Type | - | - | 1, Non-Isolated |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Texas Instruments |
CSD86356Q5D | MOSFET 25V, Nch synchronous buck NexFET MOSFETG , SON5x6 PowerBlock, 40A 8-VSON-CLIP -55 to 150 | |
| CSD86336Q3D | MOSFET 25V, Nch synchronous buck NexFET MOSFETG , SON3x3 PowerBlock, 20A 8-VSON-CLIP -55 to 150 | ||
| CSD86356Q5DT | MOSFET 25V, Nch synchronous buck NexFET MOSFETG , SON5x6 PowerBlock, 40A 8-VSON-CLIP -55 to 150 | ||
| CSD86336Q3DT | MOSFET 25V, Nch synchronous buck NexFET MOSFETG , SON3x3 PowerBlock, 20A 8-VSON-CLIP -55 to 150 | ||
| CSD86330Q3D | MOSFET Sync Buck NexFET Pwr Block MOSFET | ||
| CSD86350Q5D | MOSFET Synch Buck NexFET Pwr Block MOSFET | ||
| CSD86360Q5D | MOSFET Synchrnus Buck NxFT Pwr Block | ||
| CSD86311W1723 | MOSFET Dual N-Channel Nex FET Pwr MOSFET | ||
| CSD86330EVM-717 | Power Management IC Development Tools CSD86330EVM-717 | ||
| CSD86330 | Nuevo y original | ||
| CSD86330Q3D/BKN | Nuevo y original | ||
| CSD86330Q3DTI | Nuevo y original | ||
| CSD8635005D | Nuevo y original | ||
| CSD86350D | Nuevo y original | ||
| CSD86350Q5D . . . | Nuevo y original | ||
| CSD86360Q5D-1 | Nuevo y original | ||
| CSD86311W1723 | Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R | ||
| CSD86336Q3D | 25V POWERBLOCK N CH MOSFET | ||
| CSD86336Q3DT | SYNCHRONOUS BUCK NEXFET POWER BL | ||
| CSD86356Q5D | 25V POWERBLOCK N CH MOSFET | ||
| CSD86356Q5DT | SYNCHRONOUS BUCK NEXFET POWER BL | ||
| CSD86350Q5D | MOSFET 2N-CH 25V 40A 8SON | ||
| CSD86330EVM-717 | EVAL MODULE FOR CSD86330Q3D | ||
| CSD86330Q3D | Synchronous Buck Power Block 8-Pin SON EP T/R | ||
| CSD86350Q5DEVM-604 | EVAL MODULE FOR CSD86350Q5D | ||
| CSD86360Q5D | Synchronous Buck NexFET Power Block 8-Pin SON EP T/R |