CSD86311W1723

Mfr. #:: CSD86311W1723
Descripción:: Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: CSD86311W1723 Ficha de datos
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Más información:: CSD86311W1723 más información CSD86311W1723 Product Details

Atributo del producto
Valor de atributo

Fabricante: Instrumentos Texas

categoria de producto: FET: matrices

Serie: NexFET

embalaje: Embalaje alternativo de Digi-ReelR

Estilo de montaje: SMD / SMT

Nombre comercial: NexFET

Paquete-Estuche: 12-UFBGA, DSBGA

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 2 Channel

Paquete de dispositivo de proveedor: 12-DSBGA (1.53x1.98)

Configuración: Fuente común dual

Tipo FET: 2 N-Channel (Dual)

Potencia máxima: 1.5W

Tipo transistor: 2 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 25V

Entrada-Capacitancia-Ciss-Vds: 585pF @ 12.5V

Función FET: Puerta de nivel lógico

Corriente-Continuo-Drenaje-Id-25 ° C: 4.5A

Rds-On-Max-Id-Vgs: 39 mOhm @ 2A, 8V

Vgs-th-Max-Id: 1.4V @ 250μA

Puerta-Carga-Qg-Vgs: 4nC @ 4.5V

Disipación de potencia Pd: 1.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 2.9 ns

Hora de levantarse: 4.3 ns

Vgs-Puerta-Fuente-Voltaje: 10 V

Id-corriente-de-drenaje-continua: 4.5 A

Vds-Drain-Source-Breakdown-Voltage: 25 V

Vgs-th-Gate-Source-Threshold-Voltage: 1 V

Resistencia a la fuente de desagüe de Rds: 42 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 13.2 ns

Tiempo de retardo de encendido típico: 5.4 ns

Qg-Gate-Charge: 3.1 nC

Transconductancia directa-Mín.: 6.4 S

Tags: CSD86, CSD8, CSD

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CSD86311W1723 Descripción

***as Instruments: 25V, N ch NexFET MOSFET™, dual common source WLP1.7x2.3, 42mOhm 12-DSBGA -55 to 150

***ark: DUAL N CH POWER MOSFET, 25V, 4.5A, DSBGA-12, FULL REEL

***th Star Micro: the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as dc-dc converter applications

CSD86311W1723 Más información

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Parte #	Descripción	Valores	Precio
CSD86311W1723 DISTI # V98:2334_07248904	Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R RoHS: Compliant	8701	6000:$0.4334 3000:$0.4335 1000:$0.4831 500:$0.6045 250:$0.6786 100:$0.6793 25:$0.7761 10:$0.8624 1:$1.0051
CSD86311W1723 DISTI # 296-27599-1-ND	MOSFET 2N-CH 25V 4.5A 12DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1221In Stock	1000:$0.5574 500:$0.7061 100:$0.9105 10:$1.1520 1:$1.3000
CSD86311W1723 DISTI # 296-27599-6-ND	MOSFET 2N-CH 25V 4.5A 12DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1221In Stock	1000:$0.5574 500:$0.7061 100:$0.9105 10:$1.1520 1:$1.3000
CSD86311W1723 DISTI # 296-27599-2-ND	MOSFET 2N-CH 25V 4.5A 12DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	6000:$0.4799 3000:$0.5051
CSD86311W1723 DISTI # 25824809	Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R RoHS: Compliant	8701	6000:$0.4334 3000:$0.4335 1000:$0.4831 500:$0.6045 250:$0.6786 100:$0.6793 25:$0.7761 16:$0.8624
CSD86311W1723 DISTI # CSD86311W1723	Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R - Tape and Reel (Alt: CSD86311W1723) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4759 6000:$0.4529 12000:$0.4369 18000:$0.4229 30000:$0.4109
CSD86311W1723 DISTI # CSD86311W1723	Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R (Alt: CSD86311W1723) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.6619 6000:€0.5409 12000:€0.4959 18000:€0.4249 30000:€0.3969
CSD86311W1723	Dual N-Channel NexFET&#153,Power MOSFET	5325	1000:$0.3700 750:$0.4200 500:$0.5200 250:$0.6400 100:$0.6900 25:$0.8100 10:$0.8800 1:$0.9800
CSD86311W1723 DISTI # 595-CSD86311W1723	MOSFET Dual N-Channel Nex FET Pwr MOSFET RoHS: Compliant	1764	1:$1.0800 10:$0.9200 100:$0.7060 500:$0.6240 1000:$0.4920 3000:$0.4370
CSD86311W1723	Power Field-Effect Transistor, 4.5A I(D), 25V, 0.051ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	5076	1000:$0.4900 500:$0.5100 100:$0.5300 25:$0.5600 1:$0.6000
CSD86311W1723 DISTI # C1S746202119727	Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R RoHS: Compliant	8701	250:$0.6786 100:$0.6793 25:$0.7761 10:$0.8624
CSD86311W1723 DISTI # 1892456	MOSFET, NN CH, 25V, 4.5A, 12DSBGA RoHS: Compliant	15	5:£0.8190 25:£0.7340 100:£0.5630 250:£0.5310 500:£0.4980
CSD86311W1723 DISTI # 1892456RL	MOSFET, NN CH, 25V, 4.5A, 12DSBGA RoHS: Compliant	0	1:$1.7200 10:$1.4600 100:$1.1200 500:$0.9870 1000:$0.7790 3000:$0.6920
CSD86311W1723 DISTI # 1892456	MOSFET, NN CH, 25V, 4.5A, 12DSBGA RoHS: Compliant	0	1:$1.7200 10:$1.4600 100:$1.1200 500:$0.9870 1000:$0.7790 3000:$0.6920

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Disponibilidad

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En orden:: 5500
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El precio actual de CSD86311W1723 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,56 US$~~; ~~0,56 US$~~

10: ~~0,53 US$~~; ~~5,27 US$~~

100: ~~0,50 US$~~; ~~49,95 US$~~

500: ~~0,47 US$~~; ~~235,90 US$~~

1000: ~~0,44 US$~~; ~~444,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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CSD86311W1723

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes