BUZ30A

BUZ30A H vs BUZ30A vs BUZ30A E3045A

 
PartNumberBUZ30A HBUZ30ABUZ30A E3045A
DescriptionMOSFET N-Ch 200V 21A TO220FP-3MOSFET N-Ch 200V 21A TO220-3MOSFET N-CH 200V 21A TO-263
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiGaN-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current21 A21 A-
Rds On Drain Source Resistance100 mOhms130 mOhms-
Vgs th Gate Source Threshold Voltage2.1 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge---
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation125 W125 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameSIPMOS--
PackagingTubeTube-
Height15.65 mm15.65 mm-
Length10 mm10 mm-
SeriesBUZ30--
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm4.4 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min6 S--
Fall Time90 ns90 ns-
Product TypeMOSFETMOSFET-
Rise Time70 ns70 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time250 ns250 ns-
Typical Turn On Delay Time30 ns30 ns-
Part # AliasesBUZ30AHXKSA1 BUZ3AHXK SP000682990BUZ30AXK-
Unit Weight0.211644 oz0.211644 oz-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BUZ30A H MOSFET N-Ch 200V 21A TO220FP-3
BUZ30AH3045AATMA1 MOSFET N-Ch 200V 21A D2PAK-2
BUZ30AHXKSA1 MOSFET N-Ch 200V 21A TO220FP-3
BUZ30A MOSFET N-CH 200V 21A TO-220AB
BUZ30A E3045A MOSFET N-CH 200V 21A TO-263
BUZ30AH3045AATMA1 MOSFET N-CH 200V 21A TO-263
BUZ30AHXKSA1 MOSFET N-CH 200V 21A TO220-3
Infineon Technologies
Infineon Technologies
BUZ30A MOSFET N-Ch 200V 21A TO220-3
BUZ30A , MMBD4148T Nuevo y original
BUZ30A H SMD Nuevo y original
BUZ30A H3045A Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: BUZ30AH3045AATMA1)
BUZ30A SMD Nuevo y original
BUZ30A-E3045A Nuevo y original
BUZ30A. Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB
BUZ30AE3045A Nuevo y original
BUZ30AH Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB
BUZ30AH3045A Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
BUZ30A H Darlington Transistors MOSFET N-Ch 200V 21A TO220FP-3
BUZ30A L3045A IGBT Transistors MOSFET N-Ch 200V 21A D2PAK-2
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