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BUZ30AHXKSA1

BUZ30AHXKSA1
Mfr. #:
BUZ30AHXKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 200V 21A TO220FP-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BUZ30AHXKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
21 A
Rds On - Resistencia de la fuente de drenaje:
100 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
-
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
125 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
SIPMOS
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
6 S
Otoño:
90 ns
Tipo de producto:
MOSFET
Hora de levantarse:
70 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
250 ns
Tiempo típico de retardo de encendido:
30 ns
Parte # Alias:
BUZ30A BUZ3AHXK H SP000682990
Unidad de peso:
0.211644 oz
Tags
BUZ30AH, BUZ30A, BUZ30, BUZ3, BUZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 130 mOhm SIPMOS® Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube
***nell
MOSFET, N-CH, 200V, 21A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
***ineon
Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply
Parte # Mfg. Descripción Valores Precio
BUZ30AHXKSA1
DISTI # V99:2348_06391701		Infineon Technologies AGTrans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		889
  • 2500:$0.8873
  • 500:$0.9229
  • 100:$1.2013
  • 25:$1.4025
  • 10:$1.7462
  • 1:$2.2540
BUZ30AHXKSA1
DISTI # V36:1790_06391701		Infineon Technologies AGTrans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 500000:$0.8231
  • 250000:$0.8233
  • 50000:$0.8389
  • 5000:$0.8647
  • 500:$0.8689
BUZ30AHXKSA1
DISTI # BUZ30AHXKSA1-ND		Infineon Technologies AGMOSFET N-CH 200V 21A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		684In Stock
  • 5000:$0.9645
  • 2500:$1.0016
  • 500:$1.2984
  • 100:$1.5803
  • 25:$1.8548
  • 10:$1.9660
  • 1:$2.1900
BUZ30AHXKSA1
DISTI # 31994526		Infineon Technologies AGTrans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		3273
  • 15:$0.7114
BUZ30AHXKSA1
DISTI # 32342715		Infineon Technologies AGTrans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1000
  • 500:$1.2219
BUZ30AHXKSA1
DISTI # 30332216		Infineon Technologies AGTrans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		889
  • 8:$2.2540
BUZ30AHXKSA1
DISTI # BUZ30AHXKSA1		Infineon Technologies AGTrans MOSFET N-CH 200V 21A 3-Pin(3+tab) TO-220 Tube - Rail/Tube (Alt: BUZ30AHXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$0.7659
  • 2500:$0.7799
  • 1500:$0.8079
  • 1000:$0.8379
  • 500:$0.8689
BUZ30AHXKSA1
DISTI # BUZ30AHXKSA1		Infineon Technologies AGTrans MOSFET N-CH 200V 21A 3-Pin(3+tab) TO-220 Tube - Bulk (Alt: BUZ30AHXKSA1)
RoHS: Compliant
Min Qty: 481
Container: Bulk		Americas - 0
  • 4810:$0.6599
  • 2405:$0.6719
  • 1443:$0.6959
  • 962:$0.7219
  • 481:$0.7489
BUZ30AHXKSA1
DISTI # 68AC4438		Infineon Technologies AGMOSFET, N-CH, 200V, 21A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes360
  • 5000:$0.9280
  • 2500:$0.9640
  • 1000:$1.0300
  • 500:$1.2400
  • 100:$1.4200
  • 10:$1.7800
  • 1:$2.0900
BUZ30AHXKSA1Infineon Technologies AGSingle N-Channel 200 V 130 mOhm SIPMOS Power Mosfet - TO-220-3
RoHS: Not Compliant		1480Tube
  • 25:$1.5200
  • 100:$0.9450
  • 250:$0.8600
  • 500:$0.8000
  • 1000:$0.7450
BUZ30A H
DISTI # 726-BUZ30AH		Infineon Technologies AGMOSFET N-Ch 200V 21A TO220FP-3
RoHS: Compliant		815
  • 1:$2.0700
  • 10:$1.7600
  • 100:$1.4100
  • 500:$1.2300
  • 1000:$1.0200
  • 2500:$0.9540
  • 5000:$0.9190
BUZ30AHXKSA1
DISTI # 726-BUZ30AHXKSA1		Infineon Technologies AGMOSFET N-Ch 200V 21A TO220FP-3
RoHS: Compliant		530
  • 1:$2.0700
  • 10:$1.7600
  • 100:$1.4100
  • 500:$1.2300
  • 1000:$1.0200
  • 2500:$0.9540
  • 5000:$0.9190
BUZ30AHXKSA1Infineon Technologies AGPower Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB
RoHS: Compliant		734
  • 1000:$0.6800
  • 500:$0.7200
  • 100:$0.7500
  • 25:$0.7800
  • 1:$0.8400
BUZ30AHXKSA1
DISTI # 298342P		Infineon Technologies AGMOSFET N-CHANNEL 200V 21A OPTIMOS TO220, TU1121
  • 100:£1.5800
  • 50:£1.7000
  • 20:£1.8300
  • 5:£2.0000
BUZ30AHXKSA1
DISTI # 298342		Infineon Technologies AGMOSFET N-CHANNEL 200V 21A OPTIMOS TO220, EA714
  • 100:£1.5800
  • 50:£1.7000
  • 20:£1.8300
  • 5:£2.0000
  • 1:£2.4400
BUZ30AHXKSA1
DISTI # 8922214		Infineon Technologies AGMOSFET N-CHANNEL 200V 21A OPTIMOS TO220, PK530
  • 200:£0.9440
  • 100:£0.9620
  • 50:£0.9820
  • 20:£1.0780
  • 10:£1.1980
BUZ30AHXKSA1
DISTI # BUZ30AHXKSA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,21A,125W,PG-TO220-3596
  • 250:$0.9500
  • 50:$1.0100
  • 10:$1.1400
  • 3:$1.2700
  • 1:$1.4200
BUZ30AHXKSA1
DISTI # 2480790		Infineon Technologies AGMOSFET, N-CH, 200V, 21A, TO-220-3
RoHS: Compliant		182
  • 2500:$1.4700
  • 1000:$1.5800
  • 500:$1.8900
  • 100:$2.1700
  • 10:$2.7100
  • 1:$3.1900
BUZ30AHXKSA1
DISTI # 2480790		Infineon Technologies AGMOSFET, N-CH, 200V, 21A, TO-220-3172
  • 500:£0.8880
  • 250:£0.9540
  • 100:£1.0200
  • 10:£1.3000
  • 1:£1.7000
BUZ30AHXKSA1
DISTI # XSFP00000041067		Infineon Technologies AG 
RoHS: Compliant		799 in Stock0 on Order
  • 799:$1.2600
  • 106:$1.3500
BUZ30AHXKSA1
DISTI # XSKDRABV0051869		Infineon Technologies AG 
RoHS: Compliant		1000 in Stock0 on Order
  • 1000:$0.9973
  • 500:$1.0700
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Disponibilidad
Valores:
510
En orden:
2493
Ingrese la cantidad:
El precio actual de BUZ30AHXKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,07 US$
2,07 US$
10
1,76 US$
17,60 US$
100
1,41 US$
141,00 US$
500
1,23 US$
615,00 US$
1000
1,02 US$
1 020,00 US$
2500
0,95 US$
2 385,00 US$
5000
0,92 US$
4 595,00 US$
10000
0,88 US$
8 840,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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