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Parte # | Mfg. | Descripción | Valores | Precio |
---|---|---|---|---|
BUZ30AHXKSA1 DISTI # V99:2348_06391701 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant | 998 |
|
BUZ30AH3045AATMA1 DISTI # V72:2272_06391703 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 800 |
|
BUZ30AHXKSA1 DISTI # BUZ30AHXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 200V 21A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube | 694In Stock |
|
BUZ30AH3045AATMA1 DISTI # BUZ30AH3045AATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 21A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call |
|
BUZ30AH3045AATMA1 DISTI # BUZ30AH3045AATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 21A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
BUZ30AH3045AATMA1 DISTI # BUZ30AH3045AATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 21A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
BUZ30AHXKSA1 DISTI # 30332216 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant | 998 |
|
BUZ30AH3045AATMA1 DISTI # 26195987 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 800 |
|
BUZ30A H DISTI # SP000682990 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 (Alt: SP000682990) RoHS: Compliant Min Qty: 1 | Europe - 11500 |
|
BUZ30AHXKSA1 DISTI # BUZ30AHXKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(3+tab) TO-220 Tube - Rail/Tube (Alt: BUZ30AHXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 1850 |
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BUZ30AH3045AATMA1 DISTI # SP000736082 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin TO-263 T/R (Alt: SP000736082) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 1000 |
|
BUZ30A H DISTI # BUZ30A H | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 (Alt: BUZ30A H) RoHS: Compliant Min Qty: 500 | Asia - 0 |
|
BUZ30A H DISTI # SP000682990 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 (Alt: SP000682990) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
BUZ30A H3045A DISTI # BUZ30AH3045AATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: BUZ30AH3045AATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
BUZ30A H3045A DISTI # SP000736082 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) TO-263 (Alt: SP000736082) RoHS: Compliant Min Qty: 1000 | Europe - 0 |
|
BUZ30AHXKSA1 DISTI # 68AC4438 | Infineon Technologies AG | MOSFET, N-CH, 200V, 21A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes | 210 |
|
BUZ30AH | Infineon Technologies AG | Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 10500 |
|
BUZ30A H3045A | Infineon Technologies AG | RoHS: Not Compliant | 1000 |
|
BUZ30AH3045A | Infineon Technologies AG | Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1927 |
|
BUZ30AHXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 734 |
|
BUZ30A H DISTI # 726-BUZ30AH | Infineon Technologies AG | MOSFET N-Ch 200V 21A TO220FP-3 RoHS: Compliant | 917 |
|
BUZ30AH3045AATMA1 DISTI # 726-BUZ30AH3045AATMA | Infineon Technologies AG | MOSFET N-Ch 200V 21A D2PAK-2 RoHS: Compliant | 980 |
|
BUZ30A H3045A DISTI # 726-BUZ30AH3045A | Infineon Technologies AG | MOSFET N-Ch 200V 21A D2PAK-2 RoHS: Compliant | 988 |
|
BUZ30AHXKSA1 DISTI # 726-BUZ30AHXKSA1 | Infineon Technologies AG | MOSFET N-Ch 200V 21A TO220FP-3 RoHS: Compliant | 877 |
|
BUZ30AHXKSA1 DISTI # 298342P | Infineon Technologies AG | MOSFET N-CHANNEL 200V 21A OPTIMOS TO220, TU | 1371 |
|
BUZ30AHXKSA1 DISTI # 298342 | Infineon Technologies AG | MOSFET N-CHANNEL 200V 21A OPTIMOS TO220, EA | 747 |
|
BUZ30AHXKSA1 DISTI # 8922214 | Infineon Technologies AG | MOSFET N-CHANNEL 200V 21A OPTIMOS TO220, PK | 610 |
|
BUZ30AHXKSA1 DISTI # BUZ30AHXKSA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,200V,21A,125W,PG-TO220-3 | 250 |
|
BUZ30AH3045AATMA1 DISTI # BUZ30AH3045AATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,200V,21A,125W,PG-TO263-3 | 985 |
|
BUZ30A H DISTI # TMOSP11028 | Infineon Technologies AG | N-CH 200V21A130mOhm TO220-3 RoHS: Compliant | Stock DE - 0Stock US - 0 |
|
BUZ30AH | Infineon Technologies AG | INSTOCK | 457 | |
BUZ30AHXKSA1 DISTI # 2480790 | Infineon Technologies AG | MOSFET, N-CH, 200V, 21A, TO-220-3 RoHS: Compliant | 220 |
|
BUZ30AH3045AATMA1 DISTI # C1S322000622537 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 800 |
|
BUZ30AHXKSA1 DISTI # C1S322000453025 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant | 998 |
|
BUZ30AH3045AATMA1 DISTI # C1S322000526297 | Infineon Technologies AG | Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 2000 |
|
BUZ30AH DISTI # XSKDRABV0018087 | Infineon Technologies AG | RoHS: Compliant | 5400 |
|
BUZ30AH3045AATMA1 DISTI # XSKDRABS0003542 | Infineon Technologies AG | RoHS: Compliant | 1000 |
|
BUZ30AHXKSA1 DISTI # 2480790 | Infineon Technologies AG | MOSFET, N-CH, 200V, 21A, TO-220-3 RoHS: Compliant | 210 |
|
BUZ30AH | Infineon Technologies AG | 200V,21A,N Channel Power MOSFET | 390 |
|
Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: BUZ30A OMO.#: OMO-BUZ30A |
MOSFET N-Ch 200V 21A TO220-3 | |
Mfr.#: BUZ31 E3045A |
MOSFET N-CH 200V 14.5A TO263 | |
Mfr.#: BUZ31H OMO.#: OMO-BUZ31H-1190 |
Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
Mfr.#: BUZ323 OMO.#: OMO-BUZ323-1190 |
Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | |
Mfr.#: BUZ325 , MMBZ20VA OMO.#: OMO-BUZ325-MMBZ20VA-1190 |
Nuevo y original | |
Mfr.#: BUZ32A OMO.#: OMO-BUZ32A-1190 |
Nuevo y original | |
Mfr.#: BUZ32H3045A OMO.#: OMO-BUZ32H3045A-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA | |
Mfr.#: BUZ341 OMO.#: OMO-BUZ341-1190 |
33 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA | |
Mfr.#: BUZ342 OMO.#: OMO-BUZ342-1190 |
Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | |
Mfr.#: BUZ346 OMO.#: OMO-BUZ346-1190 |
Nuevo y original |