BSC205

BSC205N10LS G vs BSC205N10LS vs BSC205N10LSG

 
PartNumberBSC205N10LS GBSC205N10LSBSC205N10LSG
DescriptionMOSFET N-Ch 100V 7.4A TDSON-8Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerInfineonFEELING-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current7.4 A--
Rds On Drain Source Resistance20.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation76 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesBSC205N10--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Fall Time4 ns--
Product TypeMOSFET--
Rise Time24 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesBSC205N10LSGATMA1 SP000379616--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSC205N10LS G MOSFET N-Ch 100V 7.4A TDSON-8
BSC205N10LS Nuevo y original
BSC205N10LSG Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC205N10LSGATMA1 Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon Technologies
Infineon Technologies
BSC205N10LS G IGBT Transistors MOSFET N-Ch 100V 7.4A TDSON-8
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