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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSC205N10LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 10000 |
|
| BSC205N10LS G DISTI # 726-BSC205N10LSG | Infineon Technologies AG | MOSFET N-Ch 100V 7.4A TDSON-8 RoHS: Compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSC205N10LS G OMO.#: OMO-BSC205N10LS-G |
MOSFET N-Ch 100V 7.4A TDSON-8 |
|
Mfr.#: BSC205N10LS OMO.#: OMO-BSC205N10LS-1190 |
Nuevo y original |
|
|
Mfr.#: BSC205N10LSG OMO.#: OMO-BSC205N10LSG-1190 |
Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC205N10LSGATMA1 OMO.#: OMO-BSC205N10LSGATMA1-1190 |
Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC205N10LS G |
IGBT Transistors MOSFET N-Ch 100V 7.4A TDSON-8 |
