 |  | | |
| PartNumber | BSC205N10LS G | BSC200N15NS3G | BSC200N15NSG |
| Description | MOSFET N-Ch 100V 7.4A TDSON-8 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 7.4 A | - | - |
| Rds On Drain Source Resistance | 20.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 76 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | BSC205N10 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 24 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | BSC205N10LSGATMA1 SP000379616 | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC205N10LS G | MOSFET N-Ch 100V 7.4A TDSON-8 | |
| BSC200N15NS3G | Nuevo y original | ||
| BSC200N15NSG | Nuevo y original | ||
| BSC20N025S | Nuevo y original | ||
| BSC200P03LS | Nuevo y original | ||
| BSC200P03LS G | MOSFET P-Ch -30V -12.5A TDSON-8 OptiMOS P | ||
| BSC205N10LS | Nuevo y original | ||
| BSC200P03LSG | Power Field-Effect Transistor, 9.9A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC205N10LSG | Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC205N10LSGATMA1 | Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Infineon Technologies |
BSC200P03LSGAUMA1 | MOSFET P-CH 30V 12.5A TDSON-8 | |
| BSC205N10LS G | IGBT Transistors MOSFET N-Ch 100V 7.4A TDSON-8 |