BSC190N12

BSC190N12NS3 G vs BSC190N12NS3GATMA1 vs BSC190N12NS3G

 
PartNumberBSC190N12NS3 GBSC190N12NS3GATMA1BSC190N12NS3G
DescriptionMOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3MOSFET MV POWER MOS
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage120 V--
Id Continuous Drain Current44 A--
Rds On Drain Source Resistance19 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge26 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation69 W--
ConfigurationSingle--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
TypeOptiMOS 3 Power-Transistor--
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min45 S, 23 S--
Fall Time4 ns--
Product TypeMOSFETMOSFET-
Rise Time16 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time17 ns--
Part # AliasesBSC190N12NS3GATMA1 BSC19N12NS3GXT SP000652752BSC190N12NS3 BSC19N12NS3GXT G SP000652752-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSC190N12NS3 G MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3
BSC190N12NS3GATMA1 MOSFET N-CH 120V 44A TDSON-8
Infineon Technologies
Infineon Technologies
BSC190N12NS3GATMA1 MOSFET MV POWER MOS
BSC190N12NS3 G Trans MOSFET N-CH 120V 8.6A 8-Pin TDSON T/R (Alt: BSC190N12NS3 G)
BSC190N12NS3G Nuevo y original
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