 | |  | |
| PartNumber | BSC100N03MSGATMA1 | BSC100N03MS G | BSC100N03LSGATMA1 |
| Description | MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M | MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M | MOSFET N-CH 30V 44A TDSON-8 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 44 A | 44 A | - |
| Rds On Drain Source Resistance | 8.3 mOhms | 8.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 23 nC | 23 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 30 W | 30 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 3M | OptiMOS 3M | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 27 S | 27 S | - |
| Fall Time | 5.4 ns | 5.4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 4.8 ns | 4.8 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 8 ns | 8 ns | - |
| Typical Turn On Delay Time | 8.5 ns | 8.5 ns | - |
| Part # Aliases | BSC100N03MS BSC1N3MSGXT G SP000311515 | BSC100N03MSGATMA1 BSC1N3MSGXT SP000311515 | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC100N06LS3 G | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | |
| BSC100N06LS3GATMA1 | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | ||
| BSC100N03MSGATMA1 | MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M | ||
| BSC100N03MS G | MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M | ||
| BSC100N03LSGATMA1 | MOSFET N-CH 30V 44A TDSON-8 | ||
| BSC100N06LS3GATMA1 | MOSFET N-CH 60V 50A TDSON-8 | ||
| BSC100N03MSGATMA1 | MOSFET N-CH 30V 44A TDSON-8 | ||
| BSC100N03LS | Nuevo y original | ||
| BSC100N03LS G | MOSFET, N CH, 30V, 44A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:44A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0083ohm, Rds(on) Test Voltage Vgs:10V, Th | ||
| BSC100N03LSG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC100N03LSG , TDZ TR 6. | Nuevo y original | ||
| BSC100N03LSG,100N03LS, | Nuevo y original | ||
| BSC100N03MS | Nuevo y original | ||
| BSC100N03MS G | Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP | ||
| BSC100N03MSG | Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC100N03MS G) | ||
| BSC100N03MSGATMA1 , TDZ | Nuevo y original | ||
| BSC100N06LS | Nuevo y original | ||
| BSC100N06LS3 G | Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R | ||
| BSC100N06LS3G | 60V,50A,N Channel Power MOSFET | ||
| BSC100N06LS3GXT | Nuevo y original |