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BSC100N03LSGATMA1

BSC100N03LSGATMA1
Mfr. #:
BSC100N03LSGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 30V 44A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC100N03LSGATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
BSC100N03LSG, BSC100N03L, BSC100N03, BSC100N0, BSC100, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***et Japan
Transistor MOSFET N-Channel 30V 50A 4-Pin TO-252 T/R
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***emi
Power MOSFET 30V 54 A 10 mOhm Single N-Channel DPAK
***Yang
Trans MOSFET N-CH 30V 10.8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 10.8A I(D), 30V, 0.0167ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N, 30V, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 54A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 2.5V; Power Dissipatio
***peria
PSMN8R0-30YLC - N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
***el Electronic
Driver 1A 3-OUT Hi/Lo Side Half Brdg/H Brdg Automotive 14-Pin SOIC N T/R
***et
Trans MOSFET N-CH 30V 54A 5-Pin(4+Tab) LFPAK T/R
***ark
N CH POWER MOSFET, HEXFET, 30V, 14A, PQFN-8; Transistor Polarity:N Channel; Cont
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
***ure Electronics
Single N-Channel 30 V 9 mOhm 15 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
*** Source Electronics
Trans MOSFET N-CH 30V 14A 8-Pin QFN EP T/R / MOSFET N-CH 30V 44A 5X6 PQFN
***nell
MOSFET, N-CH, 30V, 44A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 30W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***emi
30 V, 35 A, 9 mOhm Single N-Channel Power MOSFET, SO-8FL
***r Electronics
Power Field-Effect Transistor, 7.4A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 7.4A/35A 5DFN
***el Electronic
RES SMD 392 OHM 1% 1/4W 1210
***emi
30 V, 35 A, 9 mOhm Single N-Channel Power MOSFET, SO-8FL
***Yang
Trans MOSFET N-CH 30V 20A 8-Pin SO-8 FL T/R - Tape and Reel
***ponent Stockers USA
7.4 A 30 V 0.013 ohm N-CHANNEL Si POWER MOSFET
***r Electronics
Power Field-Effect Transistor, 7.4A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Parte # Mfg. Descripción Valores Precio
BSC100N03LSGATMA1
DISTI # BSC100N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 44A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
    BSC100N03LSGATMA1
    DISTI # BSC100N03LSGATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 30V 44A TDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSC100N03LSGATMA1
      DISTI # BSC100N03LSGATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 30V 44A TDSON-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        BSC100N03LS G
        DISTI # 60R2508        		Infineon Technologies AGMOSFET, N CH, 30V, 44A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Product Range:-RoHS Compliant: Yes0
          BSC100N03LSGInfineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		5458
          • 1000:$0.2100
          • 500:$0.2200
          • 100:$0.2300
          • 25:$0.2400
          • 1:$0.2600
          BSC100N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Not Compliant          		5000
          • 1000:$0.2200
          • 500:$0.2400
          • 100:$0.2500
          • 25:$0.2600
          • 1:$0.2800
          BSC100N03LS G
          DISTI # 726-BSC100N03LSG          		Infineon Technologies AGMOSFET N-Ch 30V 13A TDSON-8
          RoHS: Compliant          		0
            Imagen Parte # Descripción
            BSC100N06LS3 G

            Mfr.#: BSC100N06LS3 G

            OMO.#: OMO-BSC100N06LS3-G

            		 MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
            BSC100N06LS3GATMA1

            Mfr.#: BSC100N06LS3GATMA1

            OMO.#: OMO-BSC100N06LS3GATMA1

            		 MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
            BSC100N03LS

            Mfr.#: BSC100N03LS

            OMO.#: OMO-BSC100N03LS-1190

            		 Nuevo y original
            BSC100N03LS G

            Mfr.#: BSC100N03LS G

            OMO.#: OMO-BSC100N03LS-G-1190

            		 MOSFET, N CH, 30V, 44A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:44A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0083ohm, Rds(on) Test Voltage Vgs:10V, Th
            BSC100N03LSG

            Mfr.#: BSC100N03LSG

            OMO.#: OMO-BSC100N03LSG-1190

            		 Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            BSC100N03MS G

            Mfr.#: BSC100N03MS G

            OMO.#: OMO-BSC100N03MS-G-1190

            		 Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP
            BSC100N06LS

            Mfr.#: BSC100N06LS

            OMO.#: OMO-BSC100N06LS-1190

            		 Nuevo y original
            BSC100N06LS3G

            Mfr.#: BSC100N06LS3G

            OMO.#: OMO-BSC100N06LS3G-1190

            		 60V,50A,N Channel Power MOSFET
            BSC100N06LS3GXT

            Mfr.#: BSC100N06LS3GXT

            OMO.#: OMO-BSC100N06LS3GXT-1190

            		 Nuevo y original
            BSC100N03MSGATMA1

            Mfr.#: BSC100N03MSGATMA1

            OMO.#: OMO-BSC100N03MSGATMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 30V 44A TDSON-8
            Disponibilidad
            Valores:
            Available
            En orden:
            2500
            Ingrese la cantidad:
            El precio actual de BSC100N03LSGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            0,33 US$
            0,33 US$
            10
            0,31 US$
            3,14 US$
            100
            0,30 US$
            29,70 US$
            500
            0,28 US$
            140,25 US$
            1000
            0,26 US$
            264,00 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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