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BSC100N03MSGATMA1

BSC100N03MSGATMA1
Mfr. #:
BSC100N03MSGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC100N03MSGATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
44 A
Rds On - Resistencia de la fuente de drenaje:
8.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
23 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
30 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.27 mm
Longitud:
5.9 mm
Serie:
OptiMOS 3M
Tipo de transistor:
1 N-Channel
Ancho:
5.15 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
27 S
Otoño:
5.4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4.8 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
8 ns
Tiempo típico de retardo de encendido:
8.5 ns
Parte # Alias:
BSC100N03MS BSC1N3MSGXT G SP000311515
Tags
BSC100N03MSG, BSC100N03M, BSC100N03, BSC100N0, BSC100, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 30 V 10 mOhm OptiMOS™ MOSFET - PG-TISON-8
***ment14 APAC
MOSFET, N CH, 44A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.3mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:44A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 8 mOhm 16 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 9 mOhm 18 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 48A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:32W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Power Dissipation Pd:32W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***Yang
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
***ure Electronics
N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8
***et Europe
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6680A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
***ure Electronics
Single N-Channel 30 V 8 mOhm 21 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 53A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
N-Channel 30 V 9 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel
***emi
N-Channel PowerTrench® SyncFET™, 30V, 13.5A, 9.0mΩ
***nell
MOSFET, N-CH, 30V, 13.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;
***rchild Semiconductor
The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
***ure Electronics
N-Channel 30 V 8.2 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.5mΩ
***Yang
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Parte # Mfg. Descripción Valores Precio
BSC100N03MSGATMA1
DISTI # V72:2272_06391000		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R
RoHS: Compliant		2515
  • 1000:$0.2423
  • 500:$0.2963
  • 250:$0.2965
  • 100:$0.2970
  • 25:$0.4305
  • 10:$0.4370
  • 1:$0.5199
BSC100N03MSGATMA1
DISTI # BSC100N03MSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 44A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9169In Stock
  • 1000:$0.3264
  • 500:$0.4000
  • 100:$0.5289
  • 10:$0.6760
  • 1:$0.7700
BSC100N03MSGATMA1
DISTI # BSC100N03MSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 44A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9169In Stock
  • 1000:$0.3264
  • 500:$0.4000
  • 100:$0.5289
  • 10:$0.6760
  • 1:$0.7700
BSC100N03MSGATMA1
DISTI # BSC100N03MSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 44A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.2722
BSC100N03MSGATMA1
DISTI # 30985975		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.2200
BSC100N03MSGATMA1
DISTI # 30702506		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 50000:$0.1843
  • 25000:$0.1872
  • 10000:$0.1949
  • 5000:$0.2026
BSC100N03MSGATMA1
DISTI # 27576322		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R
RoHS: Compliant		2515
  • 1000:$0.2423
  • 500:$0.2963
  • 250:$0.2965
  • 100:$0.2970
  • 31:$0.4305
BSC100N03MSGATMA1
DISTI # BSC100N03MSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC100N03MSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.1869
  • 10000:$0.1799
  • 20000:$0.1739
  • 30000:$0.1679
  • 50000:$0.1649
BSC100N03MSGATMA1
DISTI # 50Y1812		Infineon Technologies AGMOSFET Transistor, N Channel, 44 A, 30 V, 0.0083 ohm, 10 V, 2 V RoHS Compliant: Yes0
  • 10:$0.5040
  • 5:$0.5570
  • 1:$0.6100
BSC100N03MSGATMA1.
DISTI # 27AC1076		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:30W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 50000:$0.1650
  • 30000:$0.1680
  • 20000:$0.1740
  • 10000:$0.1800
  • 1:$0.1870
BSC100N03MSGATMA1Infineon Technologies AGN-Channel 30 V 10 mOhm OptiMOS MOSFET - PG-TISON-8
RoHS: Not Compliant		5000Reel
  • 5000:$0.1830
BSC100N03MS G
DISTI # 726-BSC100N03MSG		Infineon Technologies AGMOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
RoHS: Compliant		4500
  • 1:$0.6100
  • 10:$0.5040
  • 100:$0.3250
  • 1000:$0.2600
BSC100N03MSGATMA1
DISTI # 726-BSC100N03MSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
RoHS: Compliant		3879
  • 1:$0.6100
  • 10:$0.5040
  • 100:$0.3250
  • 1000:$0.2600
  • 5000:$0.2200
BSC100N03MSGATMA1
DISTI # BSC100N03MSGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,41A,30W,PG-TDSON-82877
  • 3:$0.4145
  • 25:$0.3574
  • 100:$0.2872
  • 250:$0.2494
  • 1000:$0.2322
BSC100N03MSGATMA1
DISTI # 2480746		Infineon Technologies AGMOSFET, N-CH, 30V, 44A, TDSON-8
RoHS: Compliant		0
  • 500:£0.2150
  • 250:£0.2310
  • 100:£0.2480
  • 25:£0.4050
  • 5:£0.4340
BSC100N03MSGATMA1
DISTI # 2480746RL		Infineon Technologies AGMOSFET, N-CH, 30V, 44A, TDSON-8
RoHS: Compliant		0
  • 1000:$0.4120
  • 5000:$0.4120
  • 100:$0.5150
  • 10:$0.7980
  • 1:$0.9650
BSC100N03MSGATMA1
DISTI # 2480746		Infineon Technologies AGMOSFET, N-CH, 30V, 44A, TDSON-8
RoHS: Compliant		0
  • 1000:$0.4120
  • 5000:$0.4120
  • 100:$0.5150
  • 10:$0.7980
  • 1:$0.9650
BSC100N03MSGATMA1
DISTI # XSFP00000159443		Infineon Technologies AGPower Field-Effect Transistor,7.2AI(D),950V,1.35ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB
RoHS: Compliant		15000
  • 5000:$0.3660
  • 15000:$0.3327
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Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de BSC100N03MSGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,60 US$
0,60 US$
10
0,50 US$
5,04 US$
100
0,32 US$
32,50 US$
1000
0,26 US$
260,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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