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Parte # | Mfg. | Descripción | Valores | Precio |
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BSC100N03MSGATMA1 DISTI # V72:2272_06391000 | Infineon Technologies AG | Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant | 2515 |
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BSC100N03MSGATMA1 DISTI # BSC100N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 9169In Stock |
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BSC100N03MSGATMA1 DISTI # BSC100N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 9169In Stock |
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BSC100N03MSGATMA1 DISTI # BSC100N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
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BSC100N03MSGATMA1 DISTI # 30985975 | Infineon Technologies AG | Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
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BSC100N03MSGATMA1 DISTI # 30702506 | Infineon Technologies AG | Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
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BSC100N03MSGATMA1 DISTI # 27576322 | Infineon Technologies AG | Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant | 2515 |
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BSC100N03MSGATMA1 DISTI # BSC100N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC100N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
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BSC100N03MSGATMA1 DISTI # 50Y1812 | Infineon Technologies AG | MOSFET Transistor, N Channel, 44 A, 30 V, 0.0083 ohm, 10 V, 2 V RoHS Compliant: Yes | 0 |
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BSC100N03MSGATMA1. DISTI # 27AC1076 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:30W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
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BSC100N03MSGATMA1 | Infineon Technologies AG | N-Channel 30 V 10 mOhm OptiMOS MOSFET - PG-TISON-8 RoHS: Not Compliant | 5000Reel |
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BSC100N03MS G DISTI # 726-BSC100N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M RoHS: Compliant | 4500 |
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BSC100N03MSGATMA1 DISTI # 726-BSC100N03MSGATMA | Infineon Technologies AG | MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M RoHS: Compliant | 3879 |
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BSC100N03MSGATMA1 DISTI # BSC100N03MSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,41A,30W,PG-TDSON-8 | 2877 |
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BSC100N03MSGATMA1 DISTI # 2480746 | Infineon Technologies AG | MOSFET, N-CH, 30V, 44A, TDSON-8 RoHS: Compliant | 0 |
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BSC100N03MSGATMA1 DISTI # 2480746RL | Infineon Technologies AG | MOSFET, N-CH, 30V, 44A, TDSON-8 RoHS: Compliant | 0 |
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BSC100N03MSGATMA1 DISTI # 2480746 | Infineon Technologies AG | MOSFET, N-CH, 30V, 44A, TDSON-8 RoHS: Compliant | 0 |
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BSC100N03MSGATMA1 DISTI # XSFP00000159443 | Infineon Technologies AG | Power Field-Effect Transistor,7.2AI(D),950V,1.35ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant | 15000 |
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Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: BSC100N06LS3GATMA1 OMO.#: OMO-BSC100N06LS3GATMA1 |
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | |
Mfr.#: BSC100N03MS G OMO.#: OMO-BSC100N03MS-G |
MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M | |
Mfr.#: BSC100N03LS OMO.#: OMO-BSC100N03LS-1190 |
Nuevo y original | |
Mfr.#: BSC100N03LSG OMO.#: OMO-BSC100N03LSG-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
Mfr.#: BSC100N03LSG , TDZ TR 6. |
Nuevo y original | |
Mfr.#: BSC100N03LSGATMA1 |
MOSFET N-CH 30V 44A TDSON-8 | |
Mfr.#: BSC100N03MS OMO.#: OMO-BSC100N03MS-1190 |
Nuevo y original | |
Mfr.#: BSC100N03MS G OMO.#: OMO-BSC100N03MS-G-1190 |
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP | |
Mfr.#: BSC100N06LS OMO.#: OMO-BSC100N06LS-1190 |
Nuevo y original | |
Mfr.#: BSC100N06LS3GATMA1 |
MOSFET N-CH 60V 50A TDSON-8 |