 |  |  | |
| PartNumber | APT90DR160HJ | APT94N60L2C3G | APT94N65B2C3G |
| Description | Discrete Semiconductor Modules Power Module - Diode | MOSFET FG, MOSFET, 600V, TO-264 MAX, RoHS | MOSFET FG, MOSFET, 600V, 47 AMPS, TO-247 T-MAX |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Technology | - | Si | Si |
| Mounting Style | - | Through Hole | Through Hole |
| Package / Case | - | TO-264-3 | T-MAX-3 |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 600 V | 650 V |
| Id Continuous Drain Current | - | 94 A | 94 A |
| Rds On Drain Source Resistance | - | 30 mOhms | 30 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 505 nC | 580 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 833 W | 833 W |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 5.21 mm | - |
| Length | - | 26.49 mm | - |
| Width | - | 20.5 mm | - |
| Fall Time | - | 8 ns | 167 ns |
| Rise Time | - | 27 ns | 59 ns |
| Typical Turn Off Delay Time | - | 110 ns | 498 ns |
| Typical Turn On Delay Time | - | 18 ns | 32 ns |
| Unit Weight | - | 0.373904 oz | - |
| Configuration | - | - | Dual |
| Forward Transconductance Min | - | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT90DR160HJ | Discrete Semiconductor Modules Power Module - Diode | |
| APT95GR65B2 | IGBT Transistors FG, IGBT, 650V, 95A, TO-247 T-MAX | ||
| APT94N65B2C6 | MOSFET FG, MOSFET, TO-247 T-MAX, RoHS | ||
| APT94N60L2C3G | MOSFET FG, MOSFET, 600V, TO-264 MAX, RoHS | ||
| APT94N65B2C3G | MOSFET FG, MOSFET, 600V, 47 AMPS, TO-247 T-MAX | ||
| APT9F100B | MOSFET FG, FREDFET, 1000V, TO-247 | ||
| APT97N65LC6 | MOSFET FG, MOSFET, 650V, 97A, TO-264 | ||
| APT9F100S | MOSFET Power FREDFET - MOS8 | ||
| APT9M100B | MOSFET FG, MOSFET, 1000V, TO-247 | ||
| APT95GR65JDU60 | IGBT Modules Insulated Gate Bipolar Transistor - Power MOS 8 | ||
| APT9M100B | Darlington Transistors MOSFET | ||
| APT90DR160HJ | BRIDGE RECT 1PHASE 1.6KV SOT227 | ||
| APT94N60L2C3G | Trans MOSFET N-CH 600V 94A 3-Pin(3+Tab) TO-264 MAX | ||
| APT94N65B2C3G | Trans MOSFET N-CH 650V 94A 3-Pin(3+Tab) T-MAX | ||
| APT94N65B2C6 | Trans MOSFET N-CH 650V 95A 3-Pin(3+Tab) T-MAX | ||
| APT95GR65B2 | Ultra Fast NPT IGBT N-Channel 650V 208A 3-Pin TO-247 - Rail/Tube (Alt: APT95GR65B2) | ||
| APT95GR65JDU60 | INSULATED GATE BIPOLAR TRANSISTO | ||
| APT97N65LC6 | MOSFET N-CH 650V 97A TO-264 | ||
| APT9F100B | MOSFET N-CH 1000V 9A TO-247 | ||
| APT9F100S | MOSFET N-CH 1000V 9A D3PAK | ||
| APT901R1BN | Nuevo y original | ||
| APT901R3BN | Nuevo y original | ||
| APT901RDN | Nuevo y original | ||
| APT902R4AN | Nuevo y original | ||
| APT902R4BN | Nuevo y original | ||
| APT902RBN | Nuevo y original | ||
| APT904 | Nuevo y original | ||
| APT904RBN | Nuevo y original | ||
| APT90GF100JN | Nuevo y original | ||
| APT90GF90JNX | Nuevo y original | ||
| APT94N60 | Nuevo y original | ||
| APT94N60L2C3 | Nuevo y original | ||
| APT94N65B2C3G,APT94N65B2 | Nuevo y original | ||
| APT94N65LC6 | Nuevo y original | ||
| APT97H50J | Nuevo y original | ||
| APT97N65B2C6 | Nuevo y original |