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STGP10NC60KD
STGP10NC60KD
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STGP10NC60KD

Mfr. #:
STGP10NC60KD
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors PowerMESH&#34 IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGP10NC60KD Ficha de datos
ECAD Model:

Disponibilidad

Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de STGP10NC60KD es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Cantidad
Precio unitario
Ext. Precio
1
1,14 US$
1,14 US$
10
0,98 US$
9,80 US$
100
0,75 US$
75,30 US$
500
0,67 US$
333,00 US$
1000
0,52 US$
525,00 US$
2000
0,47 US$
932,00 US$
10000
0,45 US$
4 490,00 US$
25000
0,43 US$
10 850,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2 V
Voltaje máximo del emisor de puerta:
20 V
Pd - Disipación de energía:
25 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
STGP10NC60KD
Embalaje:
Tubo
Corriente continua de colector Ic Max:
20 A
Altura:
9.15 mm
Longitud:
10.4 mm
Ancho:
4.6 mm
Marca:
STMicroelectronics
Corriente continua del colector:
9 A
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Unidad de peso:
0.211644 oz
Tags
STGP10NC, STGP10N, STGP10, STGP1, STGP, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    C***c
    C***c
    RU

    Looks quality, all 10 pieces. But delivery well very long!

    2019-04-21
    S***o
    S***o
    RU

    Not yet, but i'm already about * ball protection time

    2019-02-02
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Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ure Electronics
STGP Series IGBT Low On State Through Hole IGBT - TO-220-3
***nell
IGBT, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***-Wing Technology
STMICROELECTRONICS STGP6NC60HD IGBT Single Transistor, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 Pins
***ical
Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(3+Tab) TO-220AB Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***ical
Trans IGBT Chip N-CH 600V 14A 56000mW 3-Pin(3+Tab) TO-220 Tube
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STG Series Powermesh Low Turn Off Energy Through Hole IGBT - TO-220-2
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***icroelectronics
6 A, 600 V hyper fast IGBT with Ultrafast diode
***Yang
IKP10N60T: 650V 10A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3
***ow.cn
Trans IGBT Chip N-CH 600V 24A 110000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS
***nsix Microsemi
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 24A 110000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IGP10N60T Series 600 V 24 A Through Hole IGBT TrenchStop - PG-TO-220-3
***ark
Igbt Single Transistor, 600V, To-220-3 Rohs Compliant: Yes |Infineon IGP10N60TXKSA1
***nsix Microsemi
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ineon SCT
Infineon's 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 12A 88000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IKP06N60T: 600V 12A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3
***nsix Microsemi
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, 600V, 6A, TO-220; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:88W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; Current Ic Continuous a Max:6A; No. of Transistors:1; Package / Case:TO-220; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon SCT
The 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
Parte # Mfg. Descripción Valores Precio
STGP10NC60KD
DISTI # V99:2348_18459442		STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1966
  • 1000:$0.5240
  • 500:$0.6636
  • 100:$0.7494
  • 10:$1.0697
  • 1:$1.2417
STGP10NC60KD
DISTI # V36:1790_06560696		STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
    STGP10NC60KD
    DISTI # 497-5120-5-ND    		STMicroelectronicsIGBT 600V 20A 65W TO220
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		1291In Stock
    • 5000:$0.4900
    • 2500:$0.5145
    • 500:$0.6983
    • 100:$0.8453
    • 50:$1.0290
    • 10:$1.0840
    • 1:$1.2100
    STEVAL-IHM023V1
    DISTI # 497-10370-ND    		STMicroelectronicsEVAL BOARD FOR L6390/STGP10NC60
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		2In Stock
    • 1:$229.6900
    STM32100B-MCKIT
    DISTI # 497-12818-ND    		STMicroelectronicsEVALUATION BOARD WITH 16 MBYTE S
    RoHS: Compliant
    Min Qty: 1
    Container: Box    		1In Stock
    • 1:$1,318.8000
    STEVAL-IHM023V2
    DISTI # 497-12063-ND    		STMicroelectronicsBOARD DEMO L6390 STGP10NC60KD
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Limited Supply - Call
      STGP10NC60KD
      DISTI # 30738190      		STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
      RoHS: Compliant      		1966
      • 1000:$0.5633
      • 500:$0.7134
      • 100:$0.8056
      • 13:$1.0454
      STGP10NC60KD
      DISTI # 31002465      		STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
      RoHS: Compliant      		1100
      • 1000:$0.6160
      • 500:$0.6593
      • 100:$0.7455
      STGP10NC60KD
      DISTI # STGP10NC60KD      		STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube (Alt: STGP10NC60KD)
      RoHS: Compliant
      Min Qty: 50
      Container: Tube      		Europe - 950
      • 500:€0.5109
      • 300:€0.5499
      • 200:€0.5959
      • 100:€0.6499
      • 50:€0.7949
      STGP10NC60KD
      DISTI # STGP10NC60KD      		STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP10NC60KD)
      RoHS: Compliant
      Min Qty: 2000
      Container: Tube      		Americas - 0
      • 20000:$0.4469
      • 10000:$0.4559
      • 6000:$0.4769
      • 4000:$0.4999
      • 2000:$0.5239
      STGP10NC60KD
      DISTI # 26M3559      		STMicroelectronicsIGBT Single Transistor, 20 A, 2.5 V, 60 W, 600 V, TO-220, 3 RoHS Compliant: Yes867
      • 1000:$0.6010
      • 500:$0.7360
      • 100:$0.8190
      • 10:$1.0400
      • 1:$1.2000
      STGP10NC60KD
      DISTI # 511-STGP10NC60KD      		STMicroelectronicsIGBT Transistors PowerMESH&#34 IGBT
      RoHS: Compliant      		1741
      • 1:$1.1400
      • 10:$0.9800
      • 100:$0.7530
      • 500:$0.6660
      • 1000:$0.5250
      • 2000:$0.4660
      • 10000:$0.4490
      STGP10NC60KDSTMicroelectronicsSTGP10NC60K Series 600 V 10 A N-Channel Short Circuit Rugged IGBT - TO-220
      RoHS: Compliant      		1585Tube
      • 25:$0.8550
      • 250:$0.5250
      • 1000:$0.4650
      • 2000:$0.4400
      STGP10NC60KD
      DISTI # 6868376      		STMicroelectronicsTRANSISTOR IGBT N-CH 600V 20A TO220, PK1280
      • 250:£0.5240
      • 100:£0.5460
      • 50:£0.6320
      • 25:£0.7140
      • 5:£0.8960
      STGP10NC60KD
      DISTI # STGP10NC60KD      		STMicroelectronicsTransistor: IGBT,600V,10A,65W,TO220AB400
      • 1:$1.2600
      • 5:$1.0800
      • 25:$0.8700
      • 100:$0.7800
      STGP10NC60KD
      DISTI # 1293647      		STMicroelectronicsIGBT, TO-220
      RoHS: Compliant      		867
      • 1000:$0.8070
      • 500:$1.0200
      • 100:$1.1600
      • 5:$1.5100
      STGP10NC60KD
      DISTI # 1293647      		STMicroelectronicsIGBT, TO-2201291
      • 500:£0.5280
      • 250:£0.5640
      • 100:£0.5990
      • 25:£0.7780
      • 5:£0.8670
      STGP10NC60KD
      DISTI # XSFP00000096705      		STMicroelectronics 
      RoHS: Compliant      		856 in Stock0 on Order
      • 856:$0.9545
      • 191:$1.0500
      STGP10NC60KD
      DISTI # IGBT1518      		STMicroelectronicsIGBT 600V 10A 1,9VTO220-3Stock DE - 32400Stock HK - 0Stock US - 0
      • 50:$0.7103
      • 100:$0.6666
      • 200:$0.6557
      • 350:$0.6447
      • 650:$0.6065
      STGP10NC60KD
      DISTI # STGP10NC60KD      		STMicroelectronics600V 20A 65W TO220
      RoHS: Not Compliant      		380
      • 10:€0.9000
      • 50:€0.6000
      • 200:€0.5000
      • 500:€0.4800
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      OPA2196IDGKR

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      OMO.#: OMO-OPA196IDBVR

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      STF11N60DM2

      Mfr.#: STF11N60DM2

      OMO.#: OMO-STF11N60DM2

      		 MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
      IRLR024NTRPBF

      Mfr.#: IRLR024NTRPBF

      OMO.#: OMO-IRLR024NTRPBF

      		 MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC
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      Mfr.#: TMUX1104DGSR

      OMO.#: OMO-TMUX1104DGSR

      		 Analog Switch ICs PRECISION ANALOG MULTIPLEXER
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      		 Bluetooth Modules (802.15.1) Bluetooth BLE Module, Shielded, Antenna, 9x11.5mm, Industrial Temp
      IRLR024NTRPBF

      Mfr.#: IRLR024NTRPBF

      OMO.#: OMO-IRLR024NTRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 55V 17A DPAK
      SJ-3541A-TR-67

      Mfr.#: SJ-3541A-TR-67

      OMO.#: OMO-SJ-3541A-TR-67-CUI

      		 Stereo Jack, IP67, 3.5, 5 conductor, through hole, no switches, T&R package
      B32922C3474M

      Mfr.#: B32922C3474M

      OMO.#: OMO-B32922C3474M-800

      		 Film Capacitors 0.47uF 305V 20% 15mm L/S Class X2
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      		 N-CHANNEL 600 V, 0.26 OHM TYP.,
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