STGP10NC

STGP10NC60HD vs STGP10NC60H vs STGP10NC60K

 
PartNumberSTGP10NC60HDSTGP10NC60HSTGP10NC60K
DescriptionIGBT Transistors PowerMESH TM IGBTIGBT Transistors PowerMESH TM IGBTIGBT 600V 20A 60W TO220
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBTs - SingleIC Chips
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.9 V--
Maximum Gate Emitter Voltage20 V--
Pd Power Dissipation56 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGP10NC60HDPowerMESHPowerMESH
PackagingTubeTubeTube Alternate Packaging
Continuous Collector Current Ic Max20 A--
Height9.15 mm--
Length10.4 mm--
Width4.6 mm--
BrandSTMicroelectronics--
Continuous Collector Current7 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.012346 oz--
Package Case-TO-220-3TO-220-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-220ABTO-220AB
Power Max-60W60W
Reverse Recovery Time trr---
Current Collector Ic Max-20A20A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type---
Current Collector Pulsed Icm--30A
Vce on Max Vge Ic-2.5V @ 15V, 5A2.5V @ 15V, 5A
Switching Energy-31.8μJ (on), 95μJ (off)55μJ (on), 85μJ (off)
Gate Charge-19.2nC19nC
Td on off 25°C-14.2ns/72ns17ns/72ns
Test Condition-390V, 5A, 10 Ohm, 15V390V, 5A, 10 Ohm, 15V
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STGP10NC60HD IGBT Transistors PowerMESH TM IGBT
STGP10NC60KD IGBT Transistors PowerMESH&#34 IGBT
STGP10NC60H IGBT Transistors PowerMESH TM IGBT
STGP10NC60HD IGBT Transistors PowerMESH TM IGBT
STGP10NC60KD IGBT 600V 20A 65W TO220
STGP10NC60K IGBT 600V 20A 60W TO220
STGP10NC60S IGBT 600V 21A 62.5W TO220
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