STGP10NC60HD vs STGP10NC60H vs STGP10NC60K

 
PartNumberSTGP10NC60HDSTGP10NC60HSTGP10NC60K
DescriptionIGBT Transistors PowerMESH TM IGBTIGBT Transistors PowerMESH TM IGBTIGBT 600V 20A 60W TO220
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBTs - SingleIC Chips
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.9 V--
Maximum Gate Emitter Voltage20 V--
Pd Power Dissipation56 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGP10NC60HDPowerMESHPowerMESH
PackagingTubeTubeTube Alternate Packaging
Continuous Collector Current Ic Max20 A--
Height9.15 mm--
Length10.4 mm--
Width4.6 mm--
BrandSTMicroelectronics--
Continuous Collector Current7 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.012346 oz--
Package Case-TO-220-3TO-220-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-220ABTO-220AB
Power Max-60W60W
Reverse Recovery Time trr---
Current Collector Ic Max-20A20A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type---
Current Collector Pulsed Icm--30A
Vce on Max Vge Ic-2.5V @ 15V, 5A2.5V @ 15V, 5A
Switching Energy-31.8μJ (on), 95μJ (off)55μJ (on), 85μJ (off)
Gate Charge-19.2nC19nC
Td on off 25°C-14.2ns/72ns17ns/72ns
Test Condition-390V, 5A, 10 Ohm, 15V390V, 5A, 10 Ohm, 15V
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