PartNumber | STGP10NB60SD | STGP10NB60S | STGP10NB37LZ |
Description | IGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESH | IGBT Transistors N-Ch 600 Volt 10 Amp | IGBT Transistors N-Ch Clamped 20 Amp |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | 1.8 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 16 V |
Pd Power Dissipation | 3.5 W | 80 W | 125 W |
Minimum Operating Temperature | - 65 C | - 55 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | STGP10NB60SD | STGP10NB60S | STGP10NB37LZ |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 20 A | 20 A | 20 A |
Height | 9.15 mm | 9.15 mm | 9.15 mm |
Length | 10.4 mm | 10.4 mm | 10.4 mm |
Width | 4.6 mm | 4.6 mm | 4.6 mm |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 | 50 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
Collector Emitter Saturation Voltage | - | 1.7 V | 1.8 V |
Continuous Collector Current at 25 C | - | 20 A | 20 A |
Continuous Collector Current | - | 10 A | 20 A |
Gate Emitter Leakage Current | - | +/- 100 nA | +/- 700 uA |