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SI4850BDY-T1-GE3

SI4850BDY-T1-GE3
Mfr. #:
SI4850BDY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 60V Vds 20V Vgs SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4850BDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4850BDY-T1-GE3 DatasheetSI4850BDY-T1-GE3 Datasheet (P4-P6)
ECAD Model:
Más información:
SI4850BDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
11.3 A
Rds On - Resistencia de la fuente de drenaje:
19.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.8 V
Vgs - Voltaje puerta-fuente:
2.8 V
Qg - Carga de puerta:
11.1 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
4.5 W
Configuración:
Único
Embalaje:
Carrete
Marca:
Vishay / Siliconix
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
21 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
10 ns
Tiempo típico de retardo de encendido:
7 ns
Tags
SI4850, SI485, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 60V 11.3A 8-Pin SOIC
***ical
Trans MOSFET N-CH 60V 8.4A 8-Pin SOIC N T/R
***ark
Mosfet, N-Ch, 60V, 11.3A, Soic; Transistor Polarity:n Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.016Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SI4850BDY-T1-GE3
DISTI # V72:2272_21388877		Vishay IntertechnologiesSI4850BDY-T1-GE34994
  • 75000:$0.3839
  • 30000:$0.3871
  • 15000:$0.3902
  • 6000:$0.3933
  • 3000:$0.3965
  • 1000:$0.4253
  • 500:$0.5185
  • 250:$0.6037
  • 100:$0.6238
  • 50:$0.7221
  • 25:$0.8025
  • 10:$0.8835
  • 1:$1.0881
SI4850BDY-T1-GE3
DISTI # V99:2348_21388877		Vishay IntertechnologiesSI4850BDY-T1-GE30
  • 5000000:$0.4155
  • 2500000:$0.4156
  • 500000:$0.4161
  • 5000:$0.4167
SI4850BDY-T1-GE3
DISTI # SI4850BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 60V SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4950In Stock
  • 1000:$0.4599
  • 500:$0.5826
  • 100:$0.7052
  • 10:$0.9050
  • 1:$1.0100
SI4850BDY-T1-GE3
DISTI # SI4850BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 60V SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4950In Stock
  • 1000:$0.4599
  • 500:$0.5826
  • 100:$0.7052
  • 10:$0.9050
  • 1:$1.0100
SI4850BDY-T1-GE3
DISTI # SI4850BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 60V SO-8
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.3771
  • 12500:$0.3810
  • 5000:$0.3959
  • 2500:$0.4167
SI4850BDY-T1-GE3
DISTI # 32907528		Vishay IntertechnologiesSI4850BDY-T1-GE34994
  • 15000:$0.3902
  • 6000:$0.3933
  • 3000:$0.3965
  • 1000:$0.4253
  • 500:$0.5185
  • 250:$0.6037
  • 100:$0.6238
  • 50:$0.7221
  • 25:$0.8025
  • 16:$0.8835
SI4850BDY-T1-GE3
DISTI # SI4850BDY-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 11.3A ID 8-Pin SOIC T/R - Tape and Reel (Alt: SI4850BDY-T1-GE3)
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.3629
  • 25000:$0.3729
  • 15000:$0.3839
  • 10000:$0.3999
  • 5000:$0.4119
SI4850BDY-T1-GE3
DISTI # SI4850BDY-T1-GE3		Vishay IntertechnologiesTransistor MOSFET N-CH 60V 11.3A 8-Pin SOIC (Alt: SI4850BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500		Asia - 0
    SI4850BDY-T1-GE3
    DISTI # SI4850BDY-T1-GE3    		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 11.3A ID 8-Pin SOIC T/R (Alt: SI4850BDY-T1-GE3)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1000:€0.3879
    • 500:€0.3949
    • 100:€0.4019
    • 50:€0.4169
    • 25:€0.4519
    • 10:€0.5249
    • 1:€0.7699
    SI4850BDY-T1-GE3
    DISTI # 59AC7483    		Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
    • 10000:$0.3600
    • 6000:$0.3690
    • 4000:$0.3830
    • 2000:$0.4260
    • 1000:$0.4680
    • 1:$0.4880
    SI4850BDY-T1-GE3
    DISTI # 50AC9665    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 11.3A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes4990
    • 500:$0.5440
    • 250:$0.5890
    • 100:$0.6330
    • 50:$0.6970
    • 25:$0.7610
    • 10:$0.8250
    • 1:$1.0100
    SI4850BDY-T1-GE3
    DISTI # 78-SI4850BDY-T1-GE3    		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SO-8
    RoHS: Compliant    		4967
    • 1:$1.0000
    • 10:$0.8170
    • 100:$0.6270
    • 500:$0.5390
    • 1000:$0.4260
    • 2500:$0.3970
    • 5000:$0.3780
    • 10000:$0.3630
    SI4850BDY-T1-GE3
    DISTI # 2846625    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 11.3A, SOIC
    RoHS: Compliant    		4990
    • 1000:$0.6940
    • 500:$0.8780
    • 100:$1.0700
    • 5:$1.3700
    SI4850BDY-T1-GE3
    DISTI # 2846625    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 11.3A, SOIC4990
    • 500:£0.4120
    • 250:£0.4460
    • 100:£0.4790
    • 10:£0.6780
    • 1:£0.8710
    Imagen Parte # Descripción
    2N7002

    Mfr.#: 2N7002

    OMO.#: OMO-2N7002

    		 MOSFET N-CHANNEL 60V 115mA
    STP60NF10

    Mfr.#: STP60NF10

    OMO.#: OMO-STP60NF10

    		 MOSFET N-Ch 100 Volt 80 Amp
    RC0603FR-071KL

    Mfr.#: RC0603FR-071KL

    OMO.#: OMO-RC0603FR-071KL

    		 Thick Film Resistors - SMD 1K OHM 1%
    STS8N6LF6AG

    Mfr.#: STS8N6LF6AG

    OMO.#: OMO-STS8N6LF6AG

    		 MOSFET Automotive-grade N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package
    STP60NF10

    Mfr.#: STP60NF10

    OMO.#: OMO-STP60NF10-STMICROELECTRONICS

    		 MOSFET N-CH 100V 80A TO-220
    0454008.MR

    Mfr.#: 0454008.MR

    OMO.#: OMO-0454008-MR-LITTELFUSE

    		 Surface Mount Fuses 72V 8A Slo-Blo
    2N7002

    Mfr.#: 2N7002

    OMO.#: OMO-2N7002-ON-SEMICONDUCTOR

    		 MOSFET N-CH 60V 115MA SOT-23
    AC0603KRX7R9BB103

    Mfr.#: AC0603KRX7R9BB103

    OMO.#: OMO-AC0603KRX7R9BB103-YAGEO

    		 Cap Ceramic 0.01uF 50V X7R 10% SMD 0603 125C Paper T/R
    STS8N6LF6AG

    Mfr.#: STS8N6LF6AG

    OMO.#: OMO-STS8N6LF6AG-STMICROELECTRONICS

    		 MOSFET N-CHANNEL 60V 8A 8SO
    RC0603FR-07100KL

    Mfr.#: RC0603FR-07100KL

    OMO.#: OMO-RC0603FR-07100KL-YAGEO

    		 Thick Film Resistors - SMD 100K OHM 1%
    Disponibilidad
    Valores:
    Available
    En orden:
    1987
    Ingrese la cantidad:
    El precio actual de SI4850BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,00 US$
    1,00 US$
    10
    0,82 US$
    8,17 US$
    100
    0,63 US$
    62,70 US$
    500
    0,54 US$
    269,50 US$
    1000
    0,43 US$
    426,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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