PartNumber | SI4850BDY-T1-GE3 | SI4850EY-T1-E3 | SI4850EY-T1 |
Description | MOSFET 60V Vds 20V Vgs SO-8 | MOSFET 60V Vds 20V Vgs SO-8 | MOSFET RECOMMENDED ALT 781-SI4850EY-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | N |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 | SO-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 11.3 A | 8.5 A | - |
Rds On Drain Source Resistance | 19.5 mOhms | 22 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.8 V | 1 V | - |
Vgs Gate Source Voltage | 2.8 V | 10 V | - |
Qg Gate Charge | 11.1 nC | 27 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 175 C | - |
Pd Power Dissipation | 4.5 W | 3.3 W | - |
Configuration | Single | Single | - |
Packaging | Reel | Reel | Reel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 10 ns | 12 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 21 ns | 10 ns | - |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 10 ns | 25 ns | - |
Typical Turn On Delay Time | 7 ns | 10 ns | - |
Channel Mode | - | Enhancement | - |
Tradename | - | TrenchFET | TrenchFET |
Height | - | 1.75 mm | 1.75 mm |
Length | - | 4.9 mm | 4.9 mm |
Series | - | SI4 | SI4 |
Transistor Type | - | 1 N-Channel | - |
Width | - | 3.9 mm | 3.9 mm |
Forward Transconductance Min | - | 25 S | - |
Part # Aliases | - | SI4850EY-E3 | - |
Unit Weight | - | 0.017870 oz | 0.017870 oz |