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| PartNumber | SI4850BDY-T1-GE3 | SI4850 | SI4850DE-T1-E3 |
| Description | MOSFET 60V Vds 20V Vgs SO-8 | ||
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 11.3 A | - | - |
| Rds On Drain Source Resistance | 19.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.8 V | - | - |
| Vgs Gate Source Voltage | 2.8 V | - | - |
| Qg Gate Charge | 11.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 4.5 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 21 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |