CGHV96050F2

CGHV96050F2
Mfr. #:
CGHV96050F2
Fabricante:
N/A
Descripción:
RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CGHV96050F2 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
CGHV96050F2 más información
Atributo del producto
Valor de atributo
Fabricante
CREE
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Bandeja
Estilo de montaje
Tornillo
Rango de temperatura de funcionamiento
- 40 C to + 150 C
Paquete-Estuche
440210
Tecnología
GaN SiC
Configuración
Único
Tipo transistor
HEMT
Ganar
10 dB
Clase
-
Potencia de salida
50 W
Disipación de potencia Pd
-
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Solicitud
-
Frecuencia de operación
8.4 GHz to 9.6 GHz
Id-corriente-de-drenaje-continua
6 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.3 V
Resistencia a la fuente de desagüe de Rds
-
Polaridad del transistor
Canal N
Transconductancia directa-Mín.
-
Kit de desarrollo
CGHV96050F2-TB
Vgs-Gate-Source-Breakdown-Voltage
3 V
Tensión de corte de fuente de puerta
- 10 V to + 2 V
Voltaje de puerta de drenaje máximo
-
Figura de ruido NF
-
P1dB-Punto de compresión
-
Tags
CGHV960, CGHV9, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
FET RF 100V 9.6GHZ 440210
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Parte # Mfg. Descripción Valores Precio
CGHV96050F2
DISTI # CGHV96050F2-ND
WolfspeedRF MOSFET HEMT 40V 440210
RoHS: Compliant
Min Qty: 1
Container: Tray
98In Stock
  • 1:$458.6800
CGHV96050F2-TB
DISTI # CGHV96050F2-TB-ND
WolfspeedTEST FIXTURE FOR CGHV96050F2
RoHS: Compliant
Min Qty: 1
Container: Bulk
3In Stock
  • 1:$550.0000
CGHV96050F2
DISTI # 941-CGHV96050F2
Cree, Inc.RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
RoHS: Compliant
5
  • 1:$458.6800
CGHV96050F2-TB
DISTI # 941-CGHV96050F2-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant
2
  • 1:$550.0000
CGHV96050F2-TB
DISTI # CGHV96050F2-TB
WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant
2
  • 2:$550.0000
Imagen Parte # Descripción
CGHV96100F2

Mfr.#: CGHV96100F2

OMO.#: OMO-CGHV96100F2

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
CGHV96050F1

Mfr.#: CGHV96050F1

OMO.#: OMO-CGHV96050F1

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
CGHV96050F2

Mfr.#: CGHV96050F2

OMO.#: OMO-CGHV96050F2

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
CGHV96050F1-TB

Mfr.#: CGHV96050F1-TB

OMO.#: OMO-CGHV96050F1-TB

RF Development Tools Test Board without GaN HEMT
CGHV96100F2-TB

Mfr.#: CGHV96100F2-TB

OMO.#: OMO-CGHV96100F2-TB

RF Development Tools Test Board without GaN HEMT
CGHV96050F1-TB

Mfr.#: CGHV96050F1-TB

OMO.#: OMO-CGHV96050F1-TB-WOLFSPEED

BOARD TEST FIXTURE FOR CGHV96050
CGHV96100F2-TB

Mfr.#: CGHV96100F2-TB

OMO.#: OMO-CGHV96100F2-TB-WOLFSPEED

TEST FIXTURE FOR CGHV96100F2
CGHV96100F2

Mfr.#: CGHV96100F2

OMO.#: OMO-CGHV96100F2-WOLFSPEED

RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
CGHV96050F2

Mfr.#: CGHV96050F2

OMO.#: OMO-CGHV96050F2-WOLFSPEED

RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
CGHV96050F1

Mfr.#: CGHV96050F1

OMO.#: OMO-CGHV96050F1-WOLFSPEED

RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de CGHV96050F2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
688,02 US$
688,02 US$
10
653,62 US$
6 536,19 US$
100
619,22 US$
61 921,80 US$
500
584,82 US$
292 408,50 US$
1000
550,42 US$
550 416,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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