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CGHV96050F2

CGHV96050F2
Mfr. #:
CGHV96050F2
Fabricante:
N/A
Descripción:
RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CGHV96050F2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CGHV96050F2 más información
Atributo del producto
Valor de atributo
Fabricante:
Qorvo
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tecnología:
GaN SiC
Vds - Voltaje de ruptura de drenaje-fuente:
32 V
Vgs - Voltaje de ruptura de puerta-fuente:
100 V
Pd - Disipación de energía:
45 W
Estilo de montaje:
SMD / SMT
Embalaje:
Bandeja
Configuración:
Único
Altura:
4.064 mm
Longitud:
9.652 mm
Ancho:
5.842 mm
Marca:
Qorvo
Voltaje de corte de puerta-fuente:
- 2.9 V
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
50
Subcategoría:
Transistores
Parte # Alias:
1092444
Tags
CGHV960, CGHV9, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
FET RF 100V 9.6GHZ 440210
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Parte # Mfg. Descripción Valores Precio
CGHV96050F2
DISTI # CGHV96050F2-ND		WolfspeedRF MOSFET HEMT 40V 440210
RoHS: Compliant
Min Qty: 1
Container: Tray		98In Stock
  • 1:$458.6800
CGHV96050F2-TB
DISTI # CGHV96050F2-TB-ND		WolfspeedTEST FIXTURE FOR CGHV96050F2
RoHS: Compliant
Min Qty: 1
Container: Bulk		3In Stock
  • 1:$550.0000
CGHV96050F2
DISTI # 941-CGHV96050F2		Cree, Inc.RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
RoHS: Compliant		5
  • 1:$458.6800
CGHV96050F2-TB
DISTI # 941-CGHV96050F2-TB		Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant		2
  • 1:$550.0000
CGHV96050F2-TB
DISTI # CGHV96050F2-TB		WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant		2
  • 2:$550.0000
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Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de CGHV96050F2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
433,77 US$
433,77 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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