CGHV96100F2

Mfr. #:: CGHV96100F2
Fabricante:: N/A
Descripción:: RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: CGHV96100F2 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
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ECAD Model:
Más información:: CGHV96100F2 más información

Atributo del producto
Valor de atributo

Fabricante:: Qorvo

Categoria de producto:: Transistores RF JFET

RoHS:: Y

Tipo de transistor:: HEMT

Tecnología:: GaN SiC

Embalaje:: Bandeja

Serie:: T2G

Marca:: Qorvo

Sensible a la humedad:: Yes

Tipo de producto:: Transistores RF JFET

Cantidad de paquete de fábrica:: 50

Subcategoría:: Transistores

Parte # Alias:: 1100007

Tags: CGHV9, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV96100F2 Descripción

***i-Key: FET RF 100V 9.6GHZ 440210

CGHV96100F2 Más información

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
CGHV96100F2 DISTI # CGHV96100F2-ND	Wolfspeed	RF MOSFET HEMT 40V 440210 RoHS: Compliant Min Qty: 1 Container: Tray	210In Stock	1:$717.5400
CGHV96100F2-TB DISTI # CGHV96100F2-TB-ND	Wolfspeed	TEST FIXTURE FOR CGHV96100F2 RoHS: Compliant Min Qty: 1 Container: Bulk	On Order	1:$550.0000
CGHV96100F2 DISTI # 941-CGHV96100F2	Cree, Inc.	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt RoHS: Compliant	98	1:$717.5400
CGHV96100F2-TB DISTI # 941-CGHV96100F2-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Compliant	0	1:$550.0000

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Disponibilidad

Valores:: 88
En orden:: 2071
Ingrese la cantidad:

El precio actual de CGHV96100F2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~583,03 US$~~; ~~583,03 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

CGHV9 6
CGHV 89
CGH 418

CGHV96100F2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes