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GS66502B-E01-MR

GS66502B-E01-MR
Mfr. #:
GS66502B-E01-MR
Fabricante:
GaN Systems
Descripción:
MOSFET 650V Enhancement Mode Transistor
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS66502B-E01-MR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS66502B-E01-MR más información
Atributo del producto
Valor de atributo
Fabricante:
Sistemas de GaN
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
GaN
Estilo de montaje:
SMD / SMT
Paquete / Caja:
GaNPX-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
7.5 A
Rds On - Resistencia de la fuente de drenaje:
200 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.3 V
Vgs - Voltaje puerta-fuente:
7 V
Qg - Carga de puerta:
1.5 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
0.51 mm
Longitud:
6.6 mm
Producto:
MOSFET
Serie:
GS6650x
Tipo de transistor:
1 N-Channel
Ancho:
5 mm
Marca:
Sistemas de GaN
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
250
Subcategoría:
MOSFET
Parte # Alias:
GS66502B-E01-MR
Tags
GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS66502B 650V GaN Transistor
GaN Systems GS66502B 650V GaN Transistor is an enhancement mode GaN-on-silicon power transistor. This transistor is based on Island Technology® cell layout for high-current die performance and yield. The GS66502B transistor features 650V enhancement mode power switch, easy gate drive requirements, and low inductance GaNPX™ package. This GaN transistor is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. The GS66502B is compliant with RoHS 6 and also features reverse current capability and zero reverse recovery loss. Typical applications include high efficiency / density power conversion, AC-DC converters, half bridge topologies, fast battery charging, and small-medium UPS.
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Parte # Mfg. Descripción Valores Precio
GS66502B-E01-MR
DISTI # 499-GS66502B-E01-MR		GaN SystemsMOSFET 650V Enhancement Mode Transistor
RoHS: Compliant		1533
  • 1:$9.3500
  • 10:$9.0500
  • 25:$8.6300
  • 250:$8.0000
  • 1000:$7.7800
GS66502B-E01-MR
DISTI # GS66502B-E01-MR		GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant		750
  • 250:$7.6900
Imagen Parte # Descripción
GS-065-008-1-L

Mfr.#: GS-065-008-1-L

OMO.#: OMO-GS-065-008-1-L

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GS66504B-E01-MR

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GS66516T-E02-MR

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GS66508P-E05-MR

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 Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR-1190

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UCC24612-1DBVR

Mfr.#: UCC24612-1DBVR

OMO.#: OMO-UCC24612-1DBVR-TEXAS-INSTRUMENTS

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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de GS66502B-E01-MR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
9,35 US$
9,35 US$
10
9,05 US$
90,50 US$
25
8,63 US$
215,75 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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