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GS66508P-E05-MR

GS66508P-E05-MR
Mfr. #:
GS66508P-E05-MR
Fabricante:
GaN Systems
Descripción:
MOSFET 650V 30A E-Mode GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS66508P-E05-MR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS66508P-E05-MR más información
Atributo del producto
Valor de atributo
Fabricante:
Sistemas de GaN
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
GaN
Estilo de montaje:
SMD / SMT
Paquete / Caja:
GaNPX-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
30 A
Rds On - Resistencia de la fuente de drenaje:
55 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.7 V
Vgs - Voltaje puerta-fuente:
7 V
Qg - Carga de puerta:
5.8 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
0.51 mm
Longitud:
10 mm
Producto:
MOSFET
Serie:
GS6650x
Tipo de transistor:
1 N-Channel
Ancho:
8.7 mm
Marca:
Sistemas de GaN
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
250
Subcategoría:
MOSFET
Parte # Alias:
GS66508P-E05-MR
Tags
GS66508P, GS66508, GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Parte # Mfg. Descripción Valores Precio
GS66508P-E05-MR
DISTI # 499-GS66508P-E05-MR		GaN SystemsMOSFET 650V 30A E-Mode GaN
RoHS: Compliant		0
  • 1:$23.4600
  • 10:$22.7000
  • 25:$21.6500
  • 250:$20.1100
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Disponibilidad
Valores:
404
En orden:
2387
Ingrese la cantidad:
El precio actual de GS66508P-E05-MR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
23,46 US$
23,46 US$
10
22,70 US$
227,00 US$
25
21,65 US$
541,25 US$
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