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GS66504B-E01-MR

GS66504B-E01-MR
Mfr. #:
GS66504B-E01-MR
Fabricante:
GaN Systems
Descripción:
MOSFET 650V 15A E-Mode GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS66504B-E01-MR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS66504B-E01-MR más información
Atributo del producto
Valor de atributo
Fabricante:
Sistemas de GaN
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
GaN
Estilo de montaje:
SMD / SMT
Paquete / Caja:
GaNPX-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
45 A
Rds On - Resistencia de la fuente de drenaje:
100 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.3 V
Vgs - Voltaje puerta-fuente:
7 V
Qg - Carga de puerta:
6.2 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
0.51 mm
Longitud:
6.6 mm
Producto:
MOSFET
Serie:
GS6650x
Tipo de transistor:
1 N-Channel
Ancho:
5 mm
Marca:
Sistemas de GaN
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
250
Subcategoría:
MOSFET
Parte # Alias:
GS66504B-E01-MR
Tags
GS66504, GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Imagen Parte # Descripción
LM5114BMFX/S7003094

Mfr.#: LM5114BMFX/S7003094

OMO.#: OMO-LM5114BMFX-S7003094

 Gate Drivers Sgl 7.6A Peak Currnt Lo-Side Gate Dvr
GS-065-008-1-L

Mfr.#: GS-065-008-1-L

OMO.#: OMO-GS-065-008-1-L

 MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
GS61004B-E01-MR

Mfr.#: GS61004B-E01-MR

OMO.#: OMO-GS61004B-E01-MR

 MOSFET 100V 45A E-Mode GaN
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR

 MOSFET 650V Enhancement Mode Transistor
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR

 MOSFET 650V 22A E-Mode GaN
ATL431BQDBZR

Mfr.#: ATL431BQDBZR

OMO.#: OMO-ATL431BQDBZR

 Voltage References voltage regulator
UCC24612-1DBVR

Mfr.#: UCC24612-1DBVR

OMO.#: OMO-UCC24612-1DBVR

 Switching Controllers SYNC RECTIFIER FLYBACK
LM5114BMFX/S7003094

Mfr.#: LM5114BMFX/S7003094

OMO.#: OMO-LM5114BMFX-S7003094-TEXAS-INSTRUMENTS

 Gate Drivers Sgl 7.6A Peak Currnt Lo-Side Gate Dv
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR-1190

 MOSFET 650V Enhancement Mode Transisto
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR-1190

 MOSFET 650V 22A E-Mode GaN
Disponibilidad
Valores:
460
En orden:
2443
Ingrese la cantidad:
El precio actual de GS66504B-E01-MR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
12,14 US$
12,14 US$
10
11,75 US$
117,50 US$
25
11,20 US$
280,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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