PartNumber | IXTY2N100P-TRL | IXTY2N100P | IXTY2N60P |
Description | Discrete Semiconductor Modules Polar Power MOSFET | MOSFET 2 Amps 1000V 7.5 Rds | IGBT Transistors MOSFET 2.0 Amps 600 V 4.7 Ohm Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Product | Power MOSFET Modules | - | - |
Type | Polar | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Reel | Tube | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | - |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 27 ns | 27 ns | 23 ns |
Id Continuous Drain Current | 2 A | 2 A | - |
Pd Power Dissipation | 86 W | 86 W | - |
Product Type | Discrete Semiconductor Modules | MOSFET | - |
Rds On Drain Source Resistance | 7.5 Ohms | 7.5 Ohms | - |
Rise Time | 29 ns | 29 ns | 20 ns |
Factory Pack Quantity | 2500 | 70 | - |
Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
Tradename | Polar | - | PolarHV |
Typical Turn Off Delay Time | 80 ns | 80 ns | 60 ns |
Typical Turn On Delay Time | 25 ns | 25 ns | 28 ns |
Vds Drain Source Breakdown Voltage | 1000 V | 1 kV | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 2.38 mm | - |
Length | - | 6.73 mm | - |
Series | - | IXTY2N100 | IXTY2N60 |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Width | - | 6.22 mm | - |
Unit Weight | - | 0.012346 oz | 0.012346 oz |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 55 W |
Vgs Gate Source Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 2 A |
Vds Drain Source Breakdown Voltage | - | - | 600 V |
Vgs th Gate Source Threshold Voltage | - | - | 5 V |
Rds On Drain Source Resistance | - | - | 5.1 Ohms |
Qg Gate Charge | - | - | 7 nC |
Forward Transconductance Min | - | - | 1.4 S |