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STGW40H120DF2

STGW40H120DF2
Mfr. #:
STGW40H120DF2
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGW40H120DF2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGW40H120DF2 más información STGW40H120DF2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.1 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
80 A
Pd - Disipación de energía:
468 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGW40H120DF2
Embalaje:
Tubo
Corriente continua de colector Ic Max:
40 A
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
600
Subcategoría:
IGBT
Unidad de peso:
1.340411 oz
Tags
STGW40H1, STGW40H, STGW40, STGW4, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW40H120 Series 1200 V 40 A High Speed Trench Gate Field-Stop IGBT - TO-247
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube
***ronik
IGBT 1200V 80A 2.1V TO247-3
***i-Key
IGBT 1200V 40A HS TO-247
***ark
IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:468W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:468W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:H Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
IGBT, SINGOLO, 1.2KV, 80A, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):2.1V; Dissipazione di Potenza Pd:468W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:H Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Parte # Mfg. Descripción Valores Precio
STGW40H120DF2
DISTI # 32904011		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		570
  • 570:$5.6034
STGW40H120DF2
DISTI # 497-14715-5-ND		STMicroelectronicsIGBT 1200V 40A HS TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		513In Stock
  • 510:$6.6727
  • 120:$7.6629
  • 30:$8.8253
  • 10:$9.2560
  • 1:$10.2500
STGW40H120DF2
DISTI # V36:1790_06560761		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    STGW40H120DF2
    DISTI # STGW40H120DF2    		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube (Alt: STGW40H120DF2)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€4.3900
    • 500:€4.7900
    • 100:€4.8900
    • 50:€5.0900
    • 25:€5.2900
    • 10:€5.5900
    • 1:€6.0900
    STGW40H120DF2
    DISTI # STGW40H120DF2    		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW40H120DF2)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 6000:$5.1900
    • 3600:$5.2900
    • 2400:$5.4900
    • 1200:$5.7900
    • 600:$6.0900
    STGW40H120DF2
    DISTI # 45AC7604    		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Bulk (Alt: 45AC7604)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 500:$7.1000
    • 250:$7.7000
    • 100:$8.0100
    • 50:$8.5600
    • 25:$9.0900
    • 10:$9.4900
    • 1:$10.4000
    STGW40H120DF2
    DISTI # 45AC7604    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):2.1V,Power Dissipation Pd:468W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes55
    • 250:$5.6600
    • 500:$5.6600
    • 10:$6.1300
    • 25:$6.1300
    • 50:$6.1300
    • 100:$6.1300
    • 1:$6.6900
    STGW40H120DF2
    DISTI # 511-STGW40H120DF2    		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
    RoHS: Compliant    		582
    • 1:$9.7500
    • 10:$8.8100
    • 25:$8.4000
    • 100:$7.2900
    • 250:$6.9700
    • 500:$6.3500
    STGW40H120DF2
    DISTI # 2807176    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-247
    RoHS: Compliant    		2378
    • 510:$10.1100
    • 120:$11.6100
    • 30:$13.3800
    • 1:$15.5300
    STGW40H120DF2
    DISTI # 2807176    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-2472378
    • 100:£5.6800
    • 50:£6.1100
    • 10:£6.5400
    • 5:£7.5900
    • 1:£8.1700
    STGW40H120DF2
    DISTI # XSKDRABV0046907    		STMicroelectronicsArray/NetworkResistor,Isolated,MetalGlaze/thickFilm, 33ohm, 25V,1%+/-Tol,200ppm/Cel,SurfaceMount, 0408
    RoHS: Compliant    		290 in Stock0 on Order
    • 290:$8.5440
    • 90:$9.1560
    STGW40H120DF2
    DISTI # IGBT1410    		STMicroelectronicsIGBT 1200V80A2.1VTO247-3Stock DE - 236Stock HK - 0Stock US - 0
    • 30:$6.6900
    • 60:$6.2700
    • 90:$6.1700
    • 120:$6.0700
    • 180:$5.7100
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    Disponibilidad
    Valores:
    556
    En orden:
    2539
    Ingrese la cantidad:
    El precio actual de STGW40H120DF2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    9,75 US$
    9,75 US$
    10
    8,81 US$
    88,10 US$
    25
    8,40 US$
    210,00 US$
    100
    7,29 US$
    729,00 US$
    250
    6,97 US$
    1 742,50 US$
    500
    6,35 US$
    3 175,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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