NGTB40N120S3WG

NGTB40N120S3WG
Mfr. #:
NGTB40N120S3WG
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors IGBT 1200V 40A FS3 LOW VF
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NGTB40N120S3WG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB40N120S3WG DatasheetNGTB40N120S3WG Datasheet (P4-P6)NGTB40N120S3WG Datasheet (P7-P9)NGTB40N120S3WG Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1.2 kV
Voltaje de saturación colector-emisor:
2.3 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
160 A
Pd - Disipación de energía:
454 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
160 A
Marca:
EN Semiconductor
Corriente de fuga puerta-emisor:
200 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Unidad de peso:
0.000705 oz
Tags
NGTB40N120S, NGTB40N12, NGTB40N1, NGTB40, NGTB4, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 160A 454000mW 3-Pin(3+Tab) TO-247 Tube
***Semiconductor
IGBT, 1200V, 40A Low VF FSIII
***Components
In a Tube of 30, ON Semiconductor NGTB40N120S3WG Common Emitter IGBT, 160 A 1200 V, 3-Pin TO-247
***an P&S
1200V,40A,Low VF FSIII IGBT
***i-Key
IGBT 1.2KV 40A TO247-3
***ark
DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:454W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175�C; Product Range:-; MSL:-
***ment14 APAC
IGBT, SINGLE, 1.2KV, 160A, TO-247; DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:454W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, SINGLE, 1.2KV, 160A, TO-247; Prąd kolektora DC:160A; Napięcie nasycenia kolektor - emiter Vce(on):1.7V; Straty mocy Pd:454W; Napięcie kolektor - emiter V(br)ceo:1.2kV; Rodzaj obudowy tranzystora:TO-247; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
NGTB40N120S3WG
DISTI # V99:2348_16917327
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 160A 3-Pin(3+Tab) TO-247 Tube136
  • 1000:$3.4050
  • 500:$3.8410
  • 100:$4.4160
  • 10:$5.1940
  • 1:$6.7089
NGTB40N120S3WG
DISTI # NGTB40N120S3WGOS-ND
ON SemiconductorIGBT 1.2KV 40A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
805In Stock
  • 2520:$2.2278
  • 510:$2.7736
  • 120:$3.2582
  • 30:$3.7593
  • 10:$3.9770
  • 1:$4.4300
NGTB40N120S3WG
DISTI # 27011531
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 160A 3-Pin(3+Tab) TO-247 Tube14190
  • 30:$3.2741
NGTB40N120S3WG
DISTI # 31335379
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 160A 3-Pin(3+Tab) TO-247 Tube136
  • 1000:$3.4050
  • 500:$3.8410
  • 100:$4.4160
  • 10:$5.1940
  • 2:$6.7089
NGTB40N120S3WG
DISTI # NGTB40N120S3WG
ON SemiconductorONSNGTB40N120S3WG - Rail/Tube (Alt: NGTB40N120S3WG)
RoHS: Compliant
Min Qty: 30
Container: Tube
Americas - 22350
  • 300:$1.8900
  • 30:$1.9900
  • 60:$1.9900
  • 90:$1.9900
  • 150:$1.9900
NGTB40N120S3WG
DISTI # NGTB40N120S3WG
ON SemiconductorONSNGTB40N120S3WG (Alt: NGTB40N120S3WG)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€1.7900
  • 100:€1.9900
  • 500:€1.9900
  • 50:€2.0900
  • 25:€2.1900
  • 10:€2.2900
  • 1:€2.4900
NGTB40N120S3WG
DISTI # 13AC0564
ON SemiconductorIGBT, SINGLE, 1.2KV, 160A, TO-247,DC Collector Current:160A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:454W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes492
  • 500:$5.0300
  • 250:$5.4700
  • 100:$5.7000
  • 50:$5.9400
  • 25:$6.1700
  • 10:$6.4000
  • 1:$7.3400
NGTB40N120S3WG.
DISTI # 61AC1093
ON SemiconductorDC Collector Current:160A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:454W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:-22350
  • 500:$5.0300
  • 250:$5.4700
  • 100:$5.7000
  • 50:$5.9400
  • 25:$6.1700
  • 10:$6.4000
  • 1:$7.3400
NGTB40N120S3WG
DISTI # 863-NGTB40N120S3WG
ON SemiconductorIGBT Transistors IGBT 1200V 40A FS3 LOW VF
RoHS: Compliant
1037
  • 1:$6.1400
  • 10:$5.2200
  • 100:$4.5200
  • 250:$4.2900
  • 500:$3.8500
NGTB40N120S3WG
DISTI # 1349506
ON SemiconductorIGBT 40A 1200V TO-274-3, TU155
  • 300:£3.2100
  • 150:£3.4890
  • 30:£4.2240
NGTB40N120S3WG
DISTI # 2723793
ON SemiconductorIGBT, SINGLE, 1.2KV, 160A, TO-247
RoHS: Compliant
482
  • 2520:$4.9000
  • 510:$6.1000
  • 120:$7.1600
  • 30:$8.2600
  • 10:$8.7400
  • 1:$9.7400
NGTB40N120S3WG
DISTI # 2723793
ON SemiconductorIGBT, SINGLE, 1.2KV, 160A, TO-247452
  • 500:£2.7900
  • 250:£3.1200
  • 100:£3.2800
  • 10:£3.7800
  • 1:£5.1600
NGTB40N120S3WGON Semiconductor1200V,40A,Low VF FSIII IGBT10050
  • 1:$8.4500
  • 100:$5.3900
  • 500:$4.4500
  • 1000:$4.0900
Imagen Parte # Descripción
INA240A3QPWRQ1

Mfr.#: INA240A3QPWRQ1

OMO.#: OMO-INA240A3QPWRQ1

Current Sense Amplifiers WIDE CM BI-DIR CURRENT SHUNT MONITOR
IKW40N120CS6XKSA1

Mfr.#: IKW40N120CS6XKSA1

OMO.#: OMO-IKW40N120CS6XKSA1

IGBT Transistors INDUSTRY 14
FGH40T120SQDNL4

Mfr.#: FGH40T120SQDNL4

OMO.#: OMO-FGH40T120SQDNL4

IGBT Transistors IGBT 1200V 40A UFS
IKY40N120CS6XKSA1

Mfr.#: IKY40N120CS6XKSA1

OMO.#: OMO-IKY40N120CS6XKSA1

IGBT Transistors INDUSTRY 14
MP34DT05TR-A

Mfr.#: MP34DT05TR-A

OMO.#: OMO-MP34DT05TR-A

MEMS Microphones MEMS audio sensor omnidirectional digital microphone, 64 dB SNR, -26 dBFS sensitivity, top-port, 122.5 dBSPL AOP
CRCW08052K00FKEAC

Mfr.#: CRCW08052K00FKEAC

OMO.#: OMO-CRCW08052K00FKEAC

Thick Film Resistors - SMD 1/8Watt 2Kohms 1% Commercial Use
ERJ-6RED1203V

Mfr.#: ERJ-6RED1203V

OMO.#: OMO-ERJ-6RED1203V

Thick Film Resistors - SMD 0805 Resistor 0.5% 100ppm 120KOhm
IKY40N120CS6XKSA1

Mfr.#: IKY40N120CS6XKSA1

OMO.#: OMO-IKY40N120CS6XKSA1-INFINEON-TECHNOLOGIES

IGBT 1200V 40A TO247PLUS
INA240A3QPWRQ1

Mfr.#: INA240A3QPWRQ1

OMO.#: OMO-INA240A3QPWRQ1-TEXAS-INSTRUMENTS

WIDE CM BI-DIR CURRENT SHUNT MON
IKW40N120CS6XKSA1

Mfr.#: IKW40N120CS6XKSA1

OMO.#: OMO-IKW40N120CS6XKSA1-INFINEON-TECHNOLOGIES

IGBT 1200V 40A TO247-3-46
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de NGTB40N120S3WG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,14 US$
6,14 US$
10
5,22 US$
52,20 US$
100
4,52 US$
452,00 US$
250
4,29 US$
1 072,50 US$
500
3,85 US$
1 925,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Top