FGH30S150P

FGH30S150P
Mfr. #:
FGH30S150P
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors SA2TIGBT TO247 30A 1500V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGH30S150P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FGH30S150P más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1.5 kV
Voltaje de saturación colector-emisor:
2.15 V
Voltaje máximo del emisor de puerta:
25 V
Corriente continua del colector a 25 C:
60 A
Pd - Disipación de energía:
500 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
FGH30S150P
Embalaje:
Tubo
Corriente continua de colector Ic Max:
30 A
Marca:
ON Semiconductor / Fairchild
Corriente de fuga puerta-emisor:
+/- 500 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Unidad de peso:
0.225401 oz
Tags
FGH30S, FGH3, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1500V 60A 500000mW 3-Pin(3+Tab) TO-247 Rail
***ark
1500V 30A FS SA Trench IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conductionand switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Shorted Anode™ Trench IGBTs
ON Semiconductor Shorted Anode Trench IGBTs™ deliver superior conduction, switching performances, and easy parallel operation with exceptional avalanche capability. Fairchild Shorted Anode Trench IGBTs feature Field Stop Trench and Shorted Anode technology and are designed for induction heating, microwave oven applications, and soft switching applications.Learn More
FGH30S150P Shorted-Anode IGBT
ON Semiconductor FGH30S150P Shorted-Anode IGBT uses an advanced field stop trench and shorted-anode technology. This IGBT offers superior conduction and switching performances for soft switching applications. The FGH30S150P IGBT operates in a parallel configuration with exceptional Avalanche capability. This IGBT is designed for induction heating and microwave ovens.
Parte # Mfg. Descripción Valores Precio
FGH30S150P
DISTI # V99:2348_14141784
ON Semiconductor1500V 30A FS SA TRENCH IGBT435
  • 1000:$3.1930
  • 500:$3.6790
  • 250:$4.2660
  • 100:$4.5039
  • 10:$5.1840
  • 1:$6.6979
FGH30S150P
DISTI # V36:1790_14141784
ON Semiconductor1500V 30A FS SA TRENCH IGBT0
  • 450000:$1.8970
  • 225000:$1.9020
  • 45000:$2.6170
  • 4500:$4.0990
  • 450:$4.3600
FGH30S150P
DISTI # FGH30S150P-ND
ON SemiconductorIGBT 1500V 60A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
636In Stock
  • 2700:$2.1917
  • 900:$2.7287
  • 450:$3.0410
  • 25:$3.6984
  • 10:$3.9120
  • 1:$4.3600
FGH30S150P
DISTI # 26623068
ON Semiconductor1500V 30A FS SA TRENCH IGBT1350
  • 450:$4.3600
FGH30S150P
DISTI # 32641340
ON Semiconductor1500V 30A FS SA TRENCH IGBT450
  • 450:$3.0926
FGH30S150P
DISTI # 31344004
ON Semiconductor1500V 30A FS SA TRENCH IGBT435
  • 2:$6.6979
FGH30S150P
DISTI # FGH30S150P
ON Semiconductor1500V 30A FS SA TRENCH IGBT - Rail/Tube (Alt: FGH30S150P)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 2700:$1.8900
  • 4500:$1.8900
  • 450:$1.9900
  • 900:$1.9900
  • 1800:$1.9900
FGH30S150P
DISTI # FGH30S150P
ON Semiconductor1500V 30A FS SA TRENCH IGBT (Alt: FGH30S150P)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€1.7900
  • 500:€1.8900
  • 100:€1.9900
  • 50:€2.0900
  • 25:€2.1900
  • 10:€2.2900
  • 1:€2.4900
FGH30S150P
DISTI # FGH30S150P
ON Semiconductor1500V 30A FS SA TRENCH IGBT (Alt: FGH30S150P)
RoHS: Compliant
Min Qty: 450
Asia - 0
  • 22500:$2.5664
  • 11250:$2.6092
  • 4500:$2.6991
  • 2250:$2.7955
  • 1350:$2.8991
  • 900:$3.0106
  • 450:$3.1310
FGH30S150P
DISTI # 01AC8674
ON SemiconductorSA2TIGBT TO247 30A 1500V / TUBE0
  • 1000:$4.1600
  • 500:$4.4200
  • 250:$4.7400
  • 100:$5.1600
  • 1:$6.2700
FGH30S150P
DISTI # 512-FGH30S150P
ON SemiconductorIGBT Transistors SA2TIGBT TO247 30A 1500V
RoHS: Compliant
1815
  • 1:$6.1300
  • 10:$5.2100
  • 100:$4.5200
  • 250:$4.2800
  • 500:$3.8400
  • 1000:$3.2400
  • 2500:$3.0800
Imagen Parte # Descripción
INA181A1IDBVR

Mfr.#: INA181A1IDBVR

OMO.#: OMO-INA181A1IDBVR

Current Sense Amplifiers MULTI CHANNEL CURRENT SENSE L/H SIDE
PUMB13,115

Mfr.#: PUMB13,115

OMO.#: OMO-PUMB13-115

Bipolar Transistors - Pre-Biased TRNS DOUBL RET TAPE7
IHW30N160R5XKSA1

Mfr.#: IHW30N160R5XKSA1

OMO.#: OMO-IHW30N160R5XKSA1

IGBT Transistors
SISH615ADN-T1-GE3

Mfr.#: SISH615ADN-T1-GE3

OMO.#: OMO-SISH615ADN-T1-GE3

MOSFET -20V Vds; 12V Vgs PowerPAK 1212-8SH
FDN358P

Mfr.#: FDN358P

OMO.#: OMO-FDN358P

MOSFET SSOT-3 P-CH -30V
RSX501LAM20TR

Mfr.#: RSX501LAM20TR

OMO.#: OMO-RSX501LAM20TR

Schottky Diodes & Rectifiers 20V Vr 5A IR Schottky Br Diode
IXBT42N300HV

Mfr.#: IXBT42N300HV

OMO.#: OMO-IXBT42N300HV

IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
IXBT42N300HV

Mfr.#: IXBT42N300HV

OMO.#: OMO-IXBT42N300HV-IXYS-CORPORATION

IGBT 3000V 42A 357W TO268
PUMB13,115

Mfr.#: PUMB13,115

OMO.#: OMO-PUMB13-115-NEXPERIA

Bipolar Transistors - Pre-Biased TRNS DOUBL RET TAPE7
IHW30N160R5XKSA1

Mfr.#: IHW30N160R5XKSA1

OMO.#: OMO-IHW30N160R5XKSA1-INFINEON-TECHNOLOGIES

HOME APPLIANCES 14
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de FGH30S150P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,13 US$
6,13 US$
10
5,21 US$
52,10 US$
100
4,52 US$
452,00 US$
250
4,28 US$
1 070,00 US$
500
3,84 US$
1 920,00 US$
1000
3,24 US$
3 240,00 US$
2500
3,08 US$
7 700,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
  • Gate Drivers
    The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
  • NCP137 700 mA LDO Regulators
    ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
  • Compare FGH30S150P
    FGH30S vs FGH30S130P vs FGH30S150P
  • NCP114 Low Dropout Regulators
    ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
  • LC717A00AR Touch Sensor
    These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
  • FDMQ86530L Quad-MOSFET
    ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
Top